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POWER SEMICONDUCTOR DEVICE

  • US 20150380545A1
  • Filed: 09/10/2015
  • Published: 12/31/2015
  • Est. Priority Date: 06/13/2012
  • Status: Abandoned Application
First Claim
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1. A power semiconductor device, comprising:

  • a first semiconductor layer having a first conductivity type;

    a second semiconductor layer having the first conductivity type disposed on the first semiconductor layer, the first semiconductor layer having an effective impurity concentration that is greater than an effective impurity concentration of the second semiconductor layer;

    a third semiconductor layer having a second conductivity type that is different from the first conductivity type;

    a fourth semiconductor layer comprising a plurality of semiconductor layers having the first conductivity type and the second conductivity type;

    a first gate electrode formed between adjacent semiconductor layers of the fourth semiconductor layer, the adjacent layers having the first conductivity type, and the first gate electrode extending to the second semiconductor layer through the third semiconductor layer; and

    a junction layer disposed through the third semiconductor layer to separate portions of the fourth semiconductor layer, the junction layer comprising a protruded portion of the second semiconductor layer, whereinat least two regions are formed in the power semiconductor device, and each of the regions is formed to have a different threshold voltage, andthe first gate electrode and the first, second, third, and fourth semiconductor layers comprise parts of a first transistor.

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