MAGNETIC MEMORY AND SHIFT REGISTER MEMORY

• US 20150380638A1
• Filed: 05/05/2015
• Published: 12/31/2015
• Est. Priority Date: 06/25/2014
• Status: Active Grant

• Current Assignee: Kioxia Corporation
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: OOTERA, Yasuaki, SHIMADA, Takuya, QUINSAT, Michael Arnaud, NAKAMURA, Shiho, KONDO, Tsuyoshi, MORISE, Hirofumi
• Granted Patent: US 9,293,696 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: G11C 11/161 details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
• CPC Class Codes: G11C 11/1659 Cell access
• CPC Class Codes: G11C 11/1675 Writing or programming circuits or methods
• CPC Class Codes: G11C 19/0808 using magnetic domain propagation
• CPC Class Codes: G11C 19/0841 using electric current

Abstract

According to one embodiment, a magnetic memory includes a first magnetic unit, a first magnetic layer, a first recording/reproducing element, a first electrode, and a second electrode. The first magnetic unit extends in a first direction. The first magnetic unit includes a plurality of magnetic domains arranged in the first direction. The first magnetic unit has a columnar configuration having a hollow portion. The first magnetic layer is connected to a first end portion of the first magnetic unit, the first magnetic layer extends in a direction intersecting the first direction. The first recording/reproducing element is provided in contact with the first magnetic layer. The first electrode is electrically connected to the first magnetic layer. The second electrode is connected to a second end portion of the first magnetic unit on a side opposite to the first end portion.

Claims

1. A magnetic memory, comprising:

a first magnetic unit extending in a first direction, including a plurality of magnetic domains arranged in the first direction, and having a columnar configuration having a hollow portion;

a first magnetic layer connected to a first end portion of the first magnetic unit, the first magnetic layer extending in a direction intersecting the first direction;

a first recording/reproducing element provided in contact with the first magnetic layer;

a first electrode electrically connected to the first magnetic layer; and

a second electrode connected to a second end portion of the first magnetic unit on a side opposite to the first end portion.

2. The memory according to claim 1, further comprising:

a second magnetic layer connected to the first end portion, the second magnetic layer extending in a direction intersecting the first direction;

a second recording/reproducing element provided in contact with the second magnetic layer; and

a third electrode electrically connected to the second magnetic layer,

the first magnetic layer and the second magnetic layer including mutually-independent magnetic domains.

3. The memory according to claim 1, further comprising a second magnetic unit extending in the first direction, including a plurality of magnetic domains arranged in the first direction, and having a columnar configuration having a hollow portion,

the first magnetic layer being connected to a first end portion of the second magnetic unit,

the first electrode being connected to a second end portion of the second magnetic unit on a side opposite to the first end portion.

4. The memory according to claim 1, wherein a nonmagnetic material is provided in the hollow portion of the first magnetic unit.

5. The memory according to claim 1, further comprising:

a second magnetic unit provided inside the first magnetic unit, the second magnetic unit extending in the first direction, including a plurality of magnetic domains arranged in the first direction, and having a columnar configuration having a hollow portion;

a second magnetic layer connected to a first end portion of the second magnetic unit;

a second recording/reproducing element provided in contact with the second magnetic layer;

a third electrode electrically connected to the second magnetic layer;

a fourth electrode connected to a second end portion of the second magnetic unit on a side opposite to the first end portion; and

an insulator provided between the first magnetic unit and the second magnetic unit,

a central axis of the first magnetic unit being the same as a central axis of the second magnetic unit.

6. The memory according to claim 5, wherein a nonmagnetic material is provided in the hollow portion of the second magnetic unit.

7. The memory according to claim 5, wherein the second electrode is electrically connected to the fourth electrode.

8. The memory according to claim 1, wherein

an easy magnetization axis of the first magnetic unit is a direction from an outer wall of the first magnetic unit toward the hollow portion, and

an easy magnetization axis of the first magnetic layer is an inner-plane direction.

9. The memory according to claim 1, wherein

an easy magnetization axis of the first magnetic unit is a direction from an outer wall of the first magnetic unit toward the hollow portion, and

an easy magnetization axis of the first magnetic layer is a direction perpendicular to an inner-plane direction.

10. The memory according to claim 9, wherein the first magnetic layer is connected to the first magnetic unit at a plurality of points in a direction intersecting the first direction.

11. The memory according to claim 10, wherein the first magnetic layer has an annular configuration and is connected to the first magnetic unit in an annular configuration.

12. The memory according to claim 1, wherein the first magnetic unit has a cylindrical configuration.

13. The memory according to claim 1, wherein the first magnetic unit includes portions provided periodically in the first direction, the portions having a small dimension in a direction intersecting the first direction.

14. The memory according to claim 1, wherein the first magnetic unit has a quadrilateral tubular configuration.

15. The memory according to claim 14, wherein the first magnetic unit includes a plurality of magnetic domains arranged in the first direction at each side extending in the first direction, and the sides include mutually-independent magnetic domains.

17. A shift register memory, comprising:

a plurality of the magnetic memories according to claim 1;

a plurality of first transistors, each of the first transistors including a gate connected to a first common gate line, one terminal other than the gate connected to the corresponding second electrode, and one other terminal other than the gate connected to a first common interconnect;

a plurality of second transistors, each of the second transistors including a gate connected to a second common gate line, one terminal other than the gate connected to the corresponding first recording/reproducing element, and one other terminal other than the gate connected to a fixed potential; and

a plurality of third transistors, each of the third transistors including a gate connected to a first common gate line, one terminal other than the gate connected to the corresponding first electrode, and one other terminal other than the gate connected to a second common interconnect.

18. A shift register memory, comprising:

a plurality of the magnetic memories according to claim 1;

a plurality of first transistors, each of the first transistors including a gate connected to a first common gate line, one terminal other than the gate connected to the corresponding second electrode, and one other terminal other than the gate connected to a first common interconnect; and

a plurality of second transistors, each of the second transistors including a gate connected to a second common gate line, one terminal other than the gate connected to the corresponding first recording/reproducing element, and one other terminal other than the gate connected to a second common interconnect,

a plurality of the first electrodes being connected to a fixed potential.

19. The shift register memory according to claim 18, further comprising an interconnect provided to be arranged with the first magnetic unit, the interconnect extending in the first direction,

the one terminal of the second transistor being connected to the corresponding first recording/reproducing element via the interconnect.

20. The shift register memory according to claim 19, wherein the first transistor and the second transistor are provided on the second electrode-side of the first:

magnetic unit.

16. A magnetic memory, comprising:

a first magnetic unit extending in a first direction, including a plurality of magnetic domains arranged in the first direction, and having a columnar configuration having a hollow portion;

a first magnetic layer connected to a first end portion of the first magnetic unit, the first magnetic layer extending in a direction intersecting the first direction;

a second magnetic layer connected to the first end portion, the second magnetic layer extending in a direction intersecting the first direction;

a recording device provided in contact with the first magnetic layer;

a first electrode electrically connected to the first magnetic layer;

a second electrode connected to a second end portion of the first magnetic unit on a side opposite to the first end portion;

a reproducing element provided in contact with the second magnetic layer; and

a third electrode electrically connected to the second magnetic layer,

the first magnetic layer and the second magnetic layer including mutually-independent magnetic domains.