ARRAY SUBSTRATE, MANUFACTURING METHOD THEREOF, AND DISPLAY DEVICE
First Claim
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1. An array substrate, comprising:
- thin film transistor units arranged in array on a base substrate;
a quantum dot layer disposed over the thin film transistor units, the quantum dot layer comprising at least three kinds of quantum dots, any one of which emits light of a respective wave band when being irradiated and excited by light from an incident portion of the array substrate; and
further comprising in sequence, the base substrate, the thin film transistor units, a first insulation layer, a second insulation layer, the quantum dot layer and a first conductive layer, wherein the first insulation layer is provided with a first via, the second insulation layer is provided with a second via, and the quantum dot layer is provided with a third via, the first via, the second via and the third via are communicated with each other, and the first conductive layer is connected to a drain of the thin film transistor unit through the first via, the second via and the third via.
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Abstract
An array substrate, manufacturing method thereof and a display device are provided. The array substrate comprises thin film transistor units (2) arranged in array, and further comprises a quantum dot layer (3) disposed over the thin film transistor units (2). The quantum dot layer includes at least three kinds of quantum dots, any one kind of which emits light of a respective wave band when being irradiated and excited by light from an incident portion of the array substrate. The array substrate can improve color gamut range, transmittance of a display device without increasing the power consumption of the display device.
14 Citations
20 Claims
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1. An array substrate, comprising:
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thin film transistor units arranged in array on a base substrate; a quantum dot layer disposed over the thin film transistor units, the quantum dot layer comprising at least three kinds of quantum dots, any one of which emits light of a respective wave band when being irradiated and excited by light from an incident portion of the array substrate; and further comprising in sequence, the base substrate, the thin film transistor units, a first insulation layer, a second insulation layer, the quantum dot layer and a first conductive layer, wherein the first insulation layer is provided with a first via, the second insulation layer is provided with a second via, and the quantum dot layer is provided with a third via, the first via, the second via and the third via are communicated with each other, and the first conductive layer is connected to a drain of the thin film transistor unit through the first via, the second via and the third via. - View Dependent Claims (2, 3, 4, 6, 7, 8, 9, 10, 11, 19, 20)
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5. (canceled)
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12. A method for manufacturing an array substrate, comprising:
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forming a pattern comprising layer structures of thin film transistor units on a base substrate; and forming a quantum dot layer comprising at least three kinds of quantum dots over the thin film transistor units, wherein any kind of the quantum dots emits light of a respective wave band when being irradiated and excited by light from an incident portion of the array substrate; wherein after forming a pattern comprising layer structures of thin film transistor units, the method comprises; forming a first insulation layer over the thin film transistor units and performing an patterning process on the first insulation layer to form a first via corresponding to a drain of the thin film transistor unit; forming a second insulation layer over the first insulation layer and performing an patterning process on the second insulation layer to form a protrusion corresponding to the first via; exposing the protrusion, said forming a quantum dot layer comprising at least three kinds of quantum dots over the thin film transistor units comprising; forming a quantum dot layer over the second insulation layer, performing exposure on the protrusion to remove a portion of the quantum dot layer over the protrusion and a portion of the second insulation layer below the protrusion, to form a third via disposed in the quantum dot layer and a second via disposed in the second insulation layer, the third via, the second via and the first via being communicated with each other; and forming a pattern comprising a first conductive layer over the quantum dot layer, the first conductive layer being connected to the drain of the thin film transistor unit through the third via, the second via and the first via; or, forming a first insulation layer over the thin film transistor units; forming a second insulation layer over the first insulation layer and performing an patterning process on the second insulation layer to form a protrusion corresponding to a drain of the thin film transistor unit; exposing the protrusion; said forming a quantum dot layer comprising at least three kinds of quantum dots over the thin film transistor units comprises; forming a quantum dot layer over the second insulation layer and performing exposure to the protrusion to remove a portion of the quantum dot layer over the protrusion and a portion of the second insulation layer below the protrusion, to form a third via of the quantum dot layer and a second via of the second insulation layer, the third via and the second via being communicated with each other; by using the second insulation layer as a mask, forming a protrusion corresponding to the drain of the thin film transistor unit, the third via, the second via and the first via being communicated with each other; and forming a pattern comprising a first conductive layer over the quantum dot layer, the first conductive layer being connected to the drain of the thin film transistor unit through the third via, the second via and the first via. - View Dependent Claims (15, 16, 17, 18)
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13-14. -14. (canceled)
Specification