RADIO-FREQUENCY SWITCH HAVING DYNAMIC BODY COUPLING
First Claim
1. A radio-frequency (RF) switch comprising:
- at least one first field-effect transistor (FET) disposed between first and second nodes, each of the at least one first FET having a respective body and gate;
a coupling circuit that couples the respective body and gate of the at least one first FET, the coupling circuit configured to be switchable between a resistive-coupling mode and a body-floating mode; and
an adjustable-resistance circuit connected to either or both of the respective gate and body of the at least one FET, the adjustable-resistance circuit including a resistor in parallel with a bypass switch.
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Accused Products
Abstract
Radio-frequency (RF) switch circuits are disclosed including at least one first field-effect transistor (FET) disposed between first and second nodes, each of the at least one first FET having a respective body and gate. The RF switch circuit may include a coupling circuit that couples the respective body and gate of the at least one first FET, the coupling circuit configured to be switchable between a resistive-coupling mode and a body-floating mode, as well as an adjustable-resistance circuit connected to either or both of the respective gate and body of the at least one FET, the adjustable-resistance circuit including a resistor in parallel with a bypass switch.
42 Citations
20 Claims
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1. A radio-frequency (RF) switch comprising:
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at least one first field-effect transistor (FET) disposed between first and second nodes, each of the at least one first FET having a respective body and gate; a coupling circuit that couples the respective body and gate of the at least one first FET, the coupling circuit configured to be switchable between a resistive-coupling mode and a body-floating mode; and an adjustable-resistance circuit connected to either or both of the respective gate and body of the at least one FET, the adjustable-resistance circuit including a resistor in parallel with a bypass switch. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A semiconductor die comprising:
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a semiconductor substrate; at least one field-effect transistor (FET) formed on the semiconductor substrate; a coupling circuit that couples a respective body and gate of each of the at least one FET, the coupling circuit configured to be switchable between a resistive-coupling mode and a body-floating mode; and an adjustable-resistance circuit connected to either or both of a respective gate and body of each of the at least one FET, the adjustable-resistance circuit including a resistor in parallel with a bypass switch. - View Dependent Claims (11, 12, 13, 14, 15)
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16. A radio-frequency (RF) switch module comprising:
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a packaging substrate configured to receive a plurality of components; a semiconductor die mounted on the packaging substrate, the die including at least one field-effect transistor (FET); a coupling circuit that couples a respective body and gate of each of the at least one FET, the coupling circuit configured to be switchable between a resistive-coupling mode and a body-floating mode; and an adjustable-resistance circuit connected to either or both of a respective gate and body of each of the at least one FET, the adjustable-resistance circuit including a resistor in parallel with a bypass switch. - View Dependent Claims (17, 18, 19, 20)
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Specification