Low Temperature Atomic Layer Deposition Of Films Comprising SiCN OR SiCON

• US 20160002039A1
• Filed: 02/28/2014
• Published: 01/07/2016
• Est. Priority Date: 03/01/2013
• Status: Active Grant

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Thompson, David
• Granted Patent: US 9,643,844 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: C01B 21/0828 Carbonitrides or oxycarbonitrides of metals, boron or silicon
• CPC Class Codes: C23C 16/308 Oxynitrides
• CPC Class Codes: C23C 16/36 Carbonitrides
• CPC Class Codes: C23C 16/45525 Atomic layer deposition [ALD]
• CPC Class Codes: C23C 16/45553 characterized by the use of precursors specially adapted for ALD
• CPC Class Codes: C23C 16/48 by irradiation, e.g. photolysis, radiolysis, particle radiation

Abstract

Provided are methods for the deposition of films comprising SiCN and SiCON. Certain methods involve exposing a substrate surface to a first and second precursor, the first precursor having a formula (X_yH_3-ySi)_zCH_4-z, (X_yH_3-ySi)(CH₂)(SiX_pH_2-p)(CH₂)(SiX_yH_3-y), or (X_yH_3-ySi)(CH₂)_n(SiX_yH_3-y), wherein X is a halogen, y has a value of between 1 and 3, and z has a value of between 1 and 3, p has a value of between 0 and 2, and n has a value between 2 and 5, and the second precursor comprising a reducing amine. Certain methods also comprise exposure of the substrate surface to an oxygen source to provide a film comprising SiCON.

Claims

1-15. -15. (canceled)

16. A method of depositing a film, the method comprising exposing a substrate surface to a first and second precursor, the first precursor having a formula (X_yH_3-ySi)_zCH_4-z, (X_yH_3-ySi)(CH₂)(SiX_pH_2-p)(CH₂)(SiX_yH_3-y), or (X_yH_3-ySi)(CH₂)_n(SiX_yH_3-y), wherein X is a halogen, y has a value of between 1 and 3, and z has a value of between 1 and 3, p has a value of between 0 and 2, and n has a value between 2 and 5, and the second precursor comprising a reducing amine.

17. The method of claim 16, wherein each X is independently selected from Cl, Br and I.

18. The method of claim 16, wherein the first precursor has a formula (X_yH_3-ySi)_zCH_4-z.

19. The method of claim 18, wherein the first precursor has a structure represented by:

20. The method of claim 16, wherein the first precursor comprises bis(trichlorosilyl)methane.

21. The method of claim 16, wherein the first precursor has a formula (X_yH_3-ySi)(CH₂)_n(SiX_yH_3-y).

22. The method of claim 21, wherein n has a value of 2 or 3.

23. The method of claim 16, wherein the second precursor comprises ammonia or hydrazine.

24. The method of claim 16, wherein a film comprising SiCN is provided.

25. The method of claim 16, further comprising exposing the film comprising SiCN to an ultraviolet treatment.

26. The method of claim 16, further comprising exposing the substrate surface to a third precursor comprising hexachlorodisilane.

27. A method of depositing a film, the method comprising:

a. exposing a substrate surface to a first precursor, the first precursor having a formula (X_yH_3-ySi)_zCH_4-z, (X_yH_3-ySi)(CH₂)(SiX_pH_2-p)(CH₂)(SiX_yH_3-y), or (X_yH_3-ySi)(CH₂)_n(SiX_yH_3-y), wherein X is a halogen, y has a value of between 1 and 3, and z has a value of between 1 and 3, p has a value of between 0 and 2, and n has a value between 2 and 5;

b. exposing a substrate surface to a second precursor, the second precursor comprising a reducing amine to deposit a film comprising SiCN; and

c. exposing the film comprising SiCN to an ultraviolet treatment.

28. The method of claim 27, wherein exposure of the substrate to the first and second precursor is repeated prior to exposing the film comprising SiCN to an ultraviolet treatment.

29. The method of claim 27, wherein the first precursor has a formula (X_yH_3-ySi)_zCH_4-z.

30. The method of claim 29, wherein the first precursor has a structure represented by:

31. The method of claim 27, wherein the first precursor comprises bis(trichlorosilyl)methane.

32. The method of claim 27, wherein the first precursor has a formula (X_yH_3-ySi)(CH₂)_n(SiX_yH_3-y), and n has a value of 2 or 3.

33. The method of claim 27, wherein the second precursor comprises ammonia or hydrazine.

34. A method of depositing a film, the method comprising exposing a substrate surface to a first and second precursor, the first precursor comprising bis(trichlorosilyl)methane, and the second precursor comprising NH₃ to deposit a film comprising SiCN.

35. The method of claim 34, further comprising exposing the film comprising SiCN to an ultraviolet treatment.