Semiconductor Device Having Electrically Floating Body Transistor, Semiconductor Device Having Both Volatile and Non-Volatile Functionality and Method of Operating

• US 20160005750A1
• Filed: 08/25/2015
• Published: 01/07/2016
• Est. Priority Date: 02/07/2010
• Status: Active Grant

• Current Assignee: Zeno Semiconductor, Inc.
• Original Assignee: Zeno Semiconductor, Inc.
• Inventors: Widjaja, Yuniarto
• Granted Patent: US 9,455,262 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: G11C 11/404 with one charge-transfer gate, e.g. MOS transistor, per cell
• CPC Class Codes: G11C 11/565 using capacitive charge storage elements
• CPC Class Codes: G11C 14/0018 whereby the nonvolatile element is an EEPROM element, e.g. a floating gate or metal-nitride-oxide-silicon [MNOS] transistor
• CPC Class Codes: G11C 16/0416 comprising cells containing a single floating gate transistor and no select transistor, e.g. UV EPROM
• CPC Class Codes: G11C 16/0433 comprising cells containing a single floating gate transistor and one or more separate select transistors
• CPC Class Codes: G11C 16/06 Auxiliary circuits, e.g. for writing into memory
• CPC Class Codes: G11C 2211/4016 Memory devices with silicon-on-insulator cells
• CPC Class Codes: H01L 29/0649 Dielectric regions, e.g. SiO2 regions, air gaps
• CPC Class Codes: H01L 29/42328 with at least one additional gate other than the floating gate and the control gate, e.g. program gate, erase gate or select gate
• CPC Class Codes: H01L 29/4916 the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen H01L29/4908, H01L29/4983 take precedence
• CPC Class Codes: H01L 29/66825 with a floating gate H01L29/6684 takes precedence
• CPC Class Codes: H01L 29/66833 with a charge trapping gate insulator, e.g. MNOS transistors
• CPC Class Codes: H01L 29/7841 with floating body, e.g. programmable transistors
• CPC Class Codes: H01L 29/788 with floating gate H01L29/78391 takes precedence
• CPC Class Codes: H01L 29/7881 Programmable transistors with only two possible levels of programmation H01L29/7888 takes precedence
• CPC Class Codes: H10B 12/00 Dynamic random access memory [DRAM] devices
• CPC Class Codes: H10B 12/20 DRAM devices comprising floating-body transistors, e.g. floating-body cells
• CPC Class Codes: H10B 41/30 characterised by the memory core region
• CPC Class Codes: H10B 41/35 with a cell select transistor, e.g. NAND

Abstract

A semiconductor memory cell includes a floating body region configured to be charged to a level indicative of a state of the memory cell; a first region in electrical contact with said floating body region; a second region in electrical contact with said floating body region and spaced apart from said first region; and a gate positioned between said first and second regions. The cell may be a multi-level cell. Arrays of memory cells are disclosed for making a memory device. Methods of operating memory cells are also provided.

Claims

1-199. -199. (canceled)

200. A single polysilicon floating gate semiconductor memory cell comprising:

a substrate;

a floating body region exposed at a surface of said substrate and configured to store volatile memory;

a single polysilicon floating gate configured to store nonvolatile data;

an insulating region insulating said floating body region from said single polysilicon floating gate; and

first and second regions exposed at said surface at locations other than where said floating body region is exposed;

wherein said floating gate is configured to receive transfer of data stored by the volatile memory.

201. The single polysilicon floating gate semiconductor memory cell of claim 200, wherein said first and second regions are asymmetric, wherein a first area defines an area over which said first region is exposed at said surface and a second area defines an area over which said second region is exposed at said surface, and wherein said first area is unequal to said second area.

202. The single polysilicon floating gate semiconductor memory cell of claim 200, wherein one of said first and second regions at the surface has a higher coupling to said floating gate relative to coupling of the other of said first and second regions to said floating gate.

203. The single polysilicon floating gate semiconductor memory cell of claim 200, further comprising a buried layer at a bottom portion of the substrate, said buried layer having a conductivity type that is different from a conductivity type of said floating body region.

204. The single polysilicon floating gate semiconductor memory cell of claim 203, wherein said floating body is bounded by said surface, said first and second regions and said buried layer.

205. The single polysilicon floating gate semiconductor memory cell of claim 200, further comprising insulating layers bounding side surfaces of said substrate.

206. The single polysilicon floating gate semiconductor memory cell of claim 200, further comprising a buried insulator layer buried in a bottom portion of said substrate.

207. The single polysilicon floating gate semiconductor memory cell of claim 206, wherein said floating body is bounded by said surface, said first and second regions and said buried insulator layer.

208. The single polysilicon floating gate semiconductor memory cell of claim 200, wherein said floating gate overlies an area of said floating body exposed at said surface, and wherein a gap is located between said area overlaid and one of said first and second regions.

209. The single polysilicon floating gate semiconductor memory cell of claim 200, further comprising a select gate positioned adjacent to said single polysilicon floating gate.

210. The single polysilicon floating gate semiconductor memory cell of claim 203, wherein said first and second regions are asymmetric, wherein a first area defines an area over which said first region is exposed at said surface and a second area defines an area over which said second region is exposed at said surface, and wherein said first area is unequal to said second area.

211. The single polysilicon floating gate semiconductor memory cell of claim 209, wherein said select gate overlaps said floating gate.

212-219. -219. (canceled)

220. A single polysilicon floating gate semiconductor memory cell comprising:

a substrate;

a floating body region for storing data as volatile memory, and

a single polysilicon floating gate for storing data as non-volatile memory;

wherein said floating body region stores the data stored as volatile memory independently of said data stored as non-volatile memory, and said single polysilicon floating gate stores said data stored as non-volatile memory independently of said data stored as volatile memory.

221. The single polysilicon floating gate semiconductor memory cell of claim 220, wherein said floating body region has a first conductivity type and is bounded by a buried layer having a second conductivity type different from said first conductivity type.

222. The single polysilicon floating gate semiconductor memory cell of claim 220, wherein said floating body region is bounded a buried insulator.

223. The single polysilicon floating gate semiconductor memory cell of claim 221, wherein said first conductivity type is “

p”

type and said second conductivity type is “

n”

type.

224. The single polysilicon floating gate semiconductor memory cell of claim 220, further comprising insulating layers bounding side surfaces of said substrate.

234. The single polysilicon floating gate semiconductor cell of claim 220, wherein operations can be performed on said data stored as volatile memory regardless of a state of said data stored as non-volatile memory.

236. The single polysilicon floating gate semiconductor cell of claim 220, wherein operations can be performed on said data stored as non-volatile memory regardless of a state of said data stored as volatile memory.

225-233. -233. (canceled)