SEMICONDUCTOR DEVICE
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Abstract
A transistor which includes an electron transit layer and an electron supply layer which are stacked in a thickness direction of a substrate; an electron transit layer formed over the substrate in parallel to the electron transit layer and the electron supply layer; an anode electrode which forms a Schottky junction with the electron transit layer; and a cathode electrode which forms an ohmic junction with the electron transit layer are provided. The anode electrode is connected to a source of the transistor, and the cathode electrode is connected to a drain of the transistor.
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Citations
19 Claims
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1-3. -3. (canceled)
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4. A semiconductor device, comprising:
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a substrate; a transistor that comprises a first electron transit layer and an electron supply layer which are stacked in a thickness direction of the substrate; a second electron transit layer formed over the substrate in parallel to the first electron transit layer and the electron supply layer; an anode electrode that forms a Schottky junction with the second electron transit layer; and a cathode electrode that forms an ohmic junction with the second electron transit layer, wherein the anode electrode is connected to a source of the transistor, and the cathode electrode is connected to a drain of the transistor, wherein the transistor is located between the substrate and the second electron transit layer.
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5-15. -15. (canceled)
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16. A semiconductor device, comprising:
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a substrate; a buffer layer formed over the substrate; a first electron transit layer formed over the buffer layer; an electron supply layer formed over the first electron transit layer; a cap layer formed over the electron supply layer; an insulating layer formed over the cap layer; and a second electron transit layer formed over the insulating layer. - View Dependent Claims (17, 18, 19)
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Specification