OPTOELECTRONIC SEMICONDUCTOR CHIP ENCAPSULATED WITH AN ALD LAYER AND CORRESPONDING METHOD OF PRODUCTION
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Abstract
An optoelectronic semiconductor chip includes a semiconductor body including n-conducting and p-conducting regions, an active region generating electromagnetic radiation, a mirror layer reflecting the electromagnetic radiation, and an encapsulating layer sequence formed with an insulating material, wherein the mirror layer is arranged at an underside of the p-conducting region, the active region is arranged at a side of the p-conducting region facing away from the mirror layer, the n-conducting region is arranged at a side of the active region facing away from the p-conducting region, the encapsulation layer sequence covers the semiconductor body at the outer surface thereof in places, the encapsulation layer sequence extends at the outer surface of the semiconductor body from the active region along the p-conducting region as far as below the mirror layer, and the encapsulation layer sequence includes at least one encapsulation layer which is an ALD layer or consists of an ALD layer.
100 Citations
27 Claims
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1-12. -12. (canceled)
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13. An optoelectronic semiconductor chip comprising:
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a semiconductor body comprising an n-conducting region, an active region that generates electromagnetic radiation, and a p-conducting region; a first mirror layer that reflects the electromagnetic radiation; and an encapsulation layer sequence formed with an electrically insulating material, wherein the first mirror layer is arranged at an underside of the p-conducting region; the active region is arranged at a side of the p-conducting region facing away from the first mirror layer; the n-conducting region is arranged at a side of the active region facing away from the p-conducting region; the encapsulation layer sequence covers the semiconductor body at the outer surface thereof in places; the encapsulation layer sequence extends at the outer surface of the semiconductor body from the active region along the p-conducting region as far as below the first mirror layer; and the encapsulation layer sequence comprises at least one encapsulation layer which is an ALD layer or consists of an ALD layer. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 26)
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25. An optoelectronic semiconductor chip comprising:
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a semiconductor body comprising an n-conducting region, an active region that generates electromagnetic radiation, and a p-conducting region; a first mirror layer that reflects the electromagnetic radiation; and an encapsulation layer sequence formed with an electrically insulating material, wherein the first mirror layer is arranged at an underside of the p-conducting region; the active region is arranged at a side of the p-conducting region facing away from the first mirror layer; the n-conducting region is arranged at a side of the active region facing away from the p-conducting region; the encapsulation layer sequence covers the semiconductor body at outer surface thereof in places; the encapsulation layer sequence extends at the outer surface of the semiconductor body from the active region along the p-conducting region as far as below the first mirror layer; the encapsulation layer sequence comprises at least one encapsulation layer which is an ALD layer or consists of an ALD layer; the encapsulation layer sequence is situated partly in the n-conducting region at the outer surface of the semiconductor body and extends along the underside of the first mirror layer facing away from the p-conducting region; and the encapsulation layer sequence covers the first mirror layer at least in places.
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27. A method of producing an optoelectronic semiconductor chip comprising:
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providing a growth substrate; applying a semiconductor body to the growth substrate, wherein a n-conducting region of the semiconductor body faces the growth substrate and a p-conducting region of the semiconductor body faces away from the growth substrate; removing the p-conducting region and an active region of the semiconductor body in places and exposing the n-conducting region in places; applying an encapsulation layer sequence on exposed outer surfaces of the p-conducting region, of the active region and of the n-conducting region; removing the encapsulation layer sequence in places at an underside of the p-conducting region facing away from the n-conducting region, and in the process exposing the p-conducting region in places; arranging a first mirror layer on the exposed places of the p-conducting region, wherein applying the encapsulation layer sequence is carried out temporally before arranging the first mirror layer, and the encapsulation layer sequence comprises at least one encapsulation layer which is an ALD layer or consists of an ALD layer and which is deposited at least in places using ozone as a precursor.
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Specification