SYSTEMS AND METHODS FOR CONFIGURING A SEMICONDUCTOR DEVICE

• US 20160006440A1
• Filed: 09/14/2015
• Published: 01/07/2016
• Est. Priority Date: 10/15/2002
• Status: Active Grant

• Current Assignee: Marvell Asia Pte Limited (Marvell Technology Group Limited)
• Original Assignee: Marvell World Trade Limited (Marvell Technology Group Limited)
• Inventors: Sutardja, Sehat
• Granted Patent: US 9,350,360 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: G11C 5/00 Details of stores covered by group G11C11/00
• CPC Class Codes: G11C 5/143 Detection of memory cassette insertion or removal; Continuity checks of supply or ground lines; Detection of supply variations, interruptions or levels G11C5/148 takes precedence; Switching between alternative supplies G11C5/141 takes precedence
• CPC Class Codes: H01L 2224/05553 being rectangular
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/49175 Parallel arrangements
• CPC Class Codes: H01L 23/10 characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
• CPC Class Codes: H01L 23/315 the encapsulation having a cavity
• CPC Class Codes: H01L 23/345 Arrangements for heating thermal treatment apparatus H01L21/00
• CPC Class Codes: H01L 23/5227 Inductive arrangements or effects of, or between, wiring layers other inductive arrangements H01L23/645
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/19041 being a capacitor
• CPC Class Codes: H01L 2924/30107 Inductance
• CPC Class Codes: H01L 2924/3011 Impedance
• CPC Class Codes: H03B 5/04 Modifications of generator to compensate for variations in physical values, e.g. power supply, load, temperature
• CPC Class Codes: H03B 5/36 active element in amplifier being semiconductor device H03B5/323, H03B5/326 , H03B5/38 take precedence
• CPC Class Codes: H03L 1/026 by using a memory for digitally storing correction values H03L1/025 takes precedence
• CPC Class Codes: H03L 1/027 by using frequency conversion means which is variable with temperature, e.g. mixer, frequency divider, pulse add/substract logic circuit H03L1/023, H03L1/026 take precedence
• CPC Class Codes: H03L 1/04 Constructional details for maintaining temperature constant
• CPC Class Codes: H03L 7/07 using several loops, e.g. for redundant clock signal generation
• CPC Class Codes: H03L 7/0891 the up-down pulses controlling source and sink current generators, e.g. a charge pump
• CPC Class Codes: H03L 7/099 : concerning mainly the controlled oscillator of the loop
• CPC Class Codes: H03L 7/1976 : using a phase accumulator for controlling the counter or frequency divider

Abstract

A system for configuring a semiconductor device to generate an output signal. The system includes a temperature sensor configured to sense a plurality of operating temperatures of the semiconductor device, the plurality of operating temperatures including at least a first operating temperature and a second operating temperature. A controller is configured to determine a plurality of operating frequencies of the output signal at respective operating temperatures of the plurality of operating temperatures. The plurality of operating frequencies include a first operating frequency of the output signal when the semiconductor device is at the first operating temperature and a second operating frequency of the output signal when the semiconductor device is at the second operating temperature. Memory is configured to store calibration information that associates each of the plurality of operating temperatures of the semiconductor device with respective operating frequencies of the plurality of operating frequencies.

Claims

1. A system for configuring a semiconductor device to generate an output signal, the system comprising:

a temperature sensor configured to sense a plurality of operating temperatures of the semiconductor device, the plurality of operating temperatures including at least (i) a first operating temperature, and (ii) a second operating temperature;

a controller configured to determine a plurality of operating frequencies of the output signal at respective operating temperatures of the plurality of operating temperatures, the plurality of operating frequencies including (i) a first operating frequency of the output signal when the semiconductor device is at the first operating temperature, and (ii) a second operating frequency of the output signal when the semiconductor device is at the second operating temperature; and

memory configured to store calibration information, wherein the calibration information associates each of the plurality of operating temperatures of the semiconductor device with respective operating frequencies of the plurality of operating frequencies.

2. The system of claim 1, further comprising a heater configured to heat the semiconductor device to increase the first operating temperature of the semiconductor device to the second operating temperature of the semiconductor device.

3. The system of claim 1, wherein the calibration information further associates, for each of the plurality of operating frequencies, a plurality of temperature indicators with respective correction factors.

4. The system of claim 3, wherein the controller is further configured to (i) select an operating frequency from the plurality of operating frequencies, (ii) generate a control input to control the output signal according to the selected operating frequency, (iii) determine, for the selected operating frequency, a first temperature indicator of the plurality of temperature indicators, (iv) select, based on the first temperature indicator, a first correction factor from the respective correction factors, and (v) adjust the control input based on the first correction factor to maintain the selected operating frequency.

5. The system of claim 4, wherein the respective correction factors correspond to ratios to be applied to the control input according to the plurality of temperature indicators.

6. The system of claim 3, wherein the calibration information includes a table associating the plurality of temperature indicators to the respective correction factors.

7. The system of claim 3, wherein the plurality of temperature indicators correspond to respective sensed temperatures of the semiconductor device.

8. The system of claim 3, wherein the plurality of temperature indicators correspond to respective changes in temperature from a calibration temperature associated with the semiconductor device to a sensed temperature of the semiconductor device.

9. The system of claim 8, wherein the calibration temperature corresponds to the first operating temperature and the sensed temperature corresponds to the second operating temperature.

10. The system of claim 8, wherein the calibration temperature corresponds to a lowest operating temperature of the semiconductor device.

11. A method for configuring a semiconductor device to generate an output signal, the method comprising:

sensing a plurality of operating temperatures of the semiconductor device, the plurality of operating temperatures including at least (i) a first operating temperature, and (ii) a second operating temperature;

determining a plurality of operating frequencies of the output signal at respective operating temperatures of the plurality of operating temperatures, the plurality of operating frequencies including (i) a first operating frequency of the output signal when the semiconductor device is at the first operating temperature, and (ii) a second operating frequency of the output signal when the semiconductor device is at the second operating temperature; and

storing, in a memory, calibration information, wherein the calibration information associates each of the plurality of operating temperatures of the semiconductor device with respective operating frequencies of the plurality of operating frequencies.

12. The method of claim 11, further comprising heating the semiconductor device to increase the first operating temperature of the semiconductor device to the second operating temperature of the semiconductor device.

13. The method of claim 11, wherein the calibration information further associates, for each of the plurality of operating frequencies, a plurality of temperature indicators with respective correction factors.

14. The method of claim 13, further comprising (i) selecting an operating frequency from the plurality of operating frequencies, (ii) generating a control input to control the output signal according to the selected operating frequency, (iii) determining, for the selected operating frequency, a first temperature indicator of the plurality of temperature indicators, (iv) selecting, based on the first temperature indicator, a first correction factor from the respective correction factors, and (v) adjusting the control input based on the first correction factor to maintain the selected operating frequency.

15. The method of claim 14, wherein the respective correction factors correspond to ratios to be applied to the control input according to the plurality of temperature indicators.

16. The method of claim 13, wherein the calibration information includes a table associating the plurality of temperature indicators to the respective correction factors.

17. The method of claim 13, wherein the plurality of temperature indicators correspond to respective sensed temperatures of the semiconductor device.

18. The method of claim 13, wherein the plurality of temperature indicators correspond to respective changes in temperature from a calibration temperature associated with the semiconductor device to a sensed temperature of the semiconductor device.

19. The method of claim 18, wherein the calibration temperature corresponds to the first operating temperature and the sensed temperature corresponds to the second operating temperature.

20. The method of claim 18, wherein the calibration temperature corresponds to a lowest operating temperature of the semiconductor device.