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METHODS FOR HIGH PRECISION ETCHING OF SUBSTRATES

  • US 20160013063A1
  • Filed: 07/02/2015
  • Published: 01/14/2016
  • Est. Priority Date: 07/10/2014
  • Status: Active Grant
First Claim
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1. A method, comprising:

  • receiving a microelectronic substrate into a plasma process chamber;

    receiving a gas mixture in the plasma process chamber, the gas mixture comprising a dilution gas and a reactant gas;

    achieving a process pressure of greater than or equal to 40 mTorr in the plasma process chamber;

    applying microwave power to the gas mixture;

    applying an alternating bias power to the gas mixture that alternates on and off in an asymmetrical manner over a period of time, the bias power comprising a magnitude of no more than 150 W at a driving frequency; and

    varying concentration of the gas mixture over the period of time, the variation ranging between 0% and 100% by volume of the reactant gas.

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