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PIXEL STRUCTURE AND MANUFACTURING METHOD THEREOF

  • US 20160013219A1
  • Filed: 11/18/2013
  • Published: 01/14/2016
  • Est. Priority Date: 11/12/2013
  • Status: Active Grant
First Claim
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1. A pixel structure, comprising:

  • a transparent substrate, a gate line formed on the transparent substrate, a thin-film transistor formed on the transparent substrate, a data line formed on the transparent substrate, a pixel electrode formed on the transparent substrate and the thin-film transistor, a passivation layer formed on the pixel electrode, the transparent substrate, and the data line, and a common electrode formed on the passivation layer, the passivation layer comprising;

    a first portion located on the data line, a second portion located on the pixel electrode, and a third portion that is located on the transparent substrate and arranged on two opposite sides of the data line, the first portion of the passivation layer having a thickness that is greater than a thickness of the second portion, the pixel electrode and the common electrode partly overlapping so as to form a storage capacitance.

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