PIXEL STRUCTURE AND MANUFACTURING METHOD THEREOF
First Claim
1. A pixel structure, comprising:
- a transparent substrate, a gate line formed on the transparent substrate, a thin-film transistor formed on the transparent substrate, a data line formed on the transparent substrate, a pixel electrode formed on the transparent substrate and the thin-film transistor, a passivation layer formed on the pixel electrode, the transparent substrate, and the data line, and a common electrode formed on the passivation layer, the passivation layer comprising;
a first portion located on the data line, a second portion located on the pixel electrode, and a third portion that is located on the transparent substrate and arranged on two opposite sides of the data line, the first portion of the passivation layer having a thickness that is greater than a thickness of the second portion, the pixel electrode and the common electrode partly overlapping so as to form a storage capacitance.
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Abstract
The present invention provides a pixel structure and a manufacturing method thereof. The pixel structure includes: a transparent substrate (60), a gate line formed on the transparent substrate (60), a thin-film transistor formed on the transparent substrate (60), a data line (68) formed on the transparent substrate (60), a pixel electrode (62) formed on the transparent substrate (60) and the thin-film transistor, a passivation layer (64) formed on the pixel electrode (62), the transparent substrate (60), and the data line (68), and a common electrode (66) formed on the passivation layer (64). The passivation layer (64) includes: a first portion (72) located on the data line (68), a second portion (74) located on the pixel electrode (62), and a third portion (76) located on the transparent substrate (60) and arranged on two opposite sides of the data line (68). The first portion (72) of the passivation layer (64) has a thickness greater than a thickness of the second portion (74).
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Citations
10 Claims
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1. A pixel structure, comprising:
- a transparent substrate, a gate line formed on the transparent substrate, a thin-film transistor formed on the transparent substrate, a data line formed on the transparent substrate, a pixel electrode formed on the transparent substrate and the thin-film transistor, a passivation layer formed on the pixel electrode, the transparent substrate, and the data line, and a common electrode formed on the passivation layer, the passivation layer comprising;
a first portion located on the data line, a second portion located on the pixel electrode, and a third portion that is located on the transparent substrate and arranged on two opposite sides of the data line, the first portion of the passivation layer having a thickness that is greater than a thickness of the second portion, the pixel electrode and the common electrode partly overlapping so as to form a storage capacitance. - View Dependent Claims (2, 3)
- a transparent substrate, a gate line formed on the transparent substrate, a thin-film transistor formed on the transparent substrate, a data line formed on the transparent substrate, a pixel electrode formed on the transparent substrate and the thin-film transistor, a passivation layer formed on the pixel electrode, the transparent substrate, and the data line, and a common electrode formed on the passivation layer, the passivation layer comprising;
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4. A manufacturing method of a pixel structure, comprising the following steps:
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(11) providing a transparent substrate; (12) depositing a gate line, a thin-film transistor, a data line, and a pixel electrode on the transparent substrate; (13) depositing a passivation layer on the transparent substrate, the data line, and the pixel electrode, wherein the passivation layer comprises;
a first portion located on the data line, a second portion located on the pixel electrode, and a third portion located on the transparent substrate and arranged on two opposite sides of the data line;(14) applying etching to a portion of the passivation layer on a peripheral circuit so as to complete a first time etching and then subjecting the second portion of the passivation layer to etching so as to complete a second time etching to reduce a thickness of the second portion of the passivation layer thereby making a thickness of the first portion of the passivation layer greater than the thickness of the second portion; and (15) depositing a common electrode on the passivation layer. - View Dependent Claims (5, 6, 7)
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8. A manufacturing method of a pixel structure, comprising the following steps:
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(21) providing a transparent substrate; (22) depositing a gate line, a thin-film transistor, a data line, and a pixel electrode on the transparent substrate; (23) depositing a first passivation layer on the transparent substrate, the data line, and the pixel electrode and subjecting the first passivation layer to etching in such a way that only a portion of the first passivation layer that is located on the data line is preserved, while a remaining portion is removed; (24) depositing a second passivation layer on the transparent substrate, the pixel electrode, and the first passivation layer and subjecting the second passivation layer to etching in such a way that a portion of the second passivation layer on a peripheral circuit is removed, while a remaining portion is preserved; and (25) depositing a common electrode on the second passivation layer. - View Dependent Claims (9, 10)
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Specification