SEMICONDUCTOR DEVICE FOR DETECTION OF RADIATION AND METHOD OF PRODUCING A SEMICONDUCTOR DEVICE FOR DETECTION OF RADIATION

• US 20160020238A1
• Filed: 02/24/2014
• Published: 01/21/2016
• Est. Priority Date: 03/01/2013
• Status: Active Grant

• Current Assignee: ams AG (Ams-Osram AG)
• Original Assignee: ams AG (Ams-Osram AG)
• Inventors: Schrank, Franz, Siegert, Joerg, Enichlmair, Hubert
• Granted Patent: US 11,107,848 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: H01L 2224/02372 connecting to a via connection in the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/0401 Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
• CPC Class Codes: H01L 2224/05548 Bonding area integrally formed with a redistribution layer on the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/13024 the bump connector being disposed on a redistribution layer on the semiconductor or solid-state body
• CPC Class Codes: H01L 23/481 Internal lead connections, e.g. via connections, feedthrough structures
• CPC Class Codes: H01L 27/14618 Containers
• CPC Class Codes: H01L 27/14621 Colour filter arrangements
• CPC Class Codes: H01L 27/14632 Wafer-level processed structures
• CPC Class Codes: H01L 27/14636 Interconnect structures
• CPC Class Codes: H01L 27/14685 Process for coatings or optical elements
• CPC Class Codes: H01L 27/14687 Wafer level processing

Abstract

The semiconductor device for detection of radiation comprises a semiconductor substrate (1) with a main surface (11), a dielectric layer (6) comprising at least one compound of a semiconductor material, an integrated circuit (2) including at least one component sensitive to radiation (3), a wiring (4) of the integrated circuit embedded in an intermetal layer (8) of the dielectric layer (6), an electrically conductive through-substrate via (5) contacting the wiring, and an optical filter element (7) arranged immediately on the dielectric layer above the component sensitive to radiation. The dielectric layer comprises a passivation layer (9) at least above the through-substrate via, the passivation layer comprises a dielectric material that is different from the intermetal layer (8), and the wiring is arranged between the main surface and the passivation layer.

Claims

1. A semiconductor device for detection of radiation, comprising:

a semiconductor substrate with a main surface;

a dielectric layer comprising at least one compound of a semiconductor material, the dielectric layer being arranged on or above the main surface;

an integrated circuit including at least one component sensitive to radiation, the integrated circuit being arranged in the substrate at or near the main surface,

a wiring of the integrated circuit,

the dielectric layer comprising an intermetal layer, the wiring being arranged in the intermetal layer;

an electrically conductive through-substrate via contacting the wiring;

an optical filter element arranged immediately on the dielectric layer above the component sensitive to radiation;

the dielectric layer comprising a passivation layer at least above the through-substrate via;

the passivation layer comprising a dielectric material that is different from the intermetal layer; and

the wiring being arranged between the main surface and the passivation layer.

2. The semiconductor device of claim 1, wherein

the passivation layer is arranged in or on the intermetal layer;

the passivation layer comprises an opening above the component sensitive to radiation, the intermetal layer being free from the passivation layer in the opening; and

the optical filter element is arranged on the intermetal layer above or in the opening of the passivation layer.

3. The semiconductor device of claim 1, wherein

the optical filter element comprises a first structured filter layer providing an interference filter and a second structured filter layer providing at least one color component of an RGB filter.

4. The semiconductor device of claim 1, further comprising:

an integrated filter layer in the dielectric layer, the integrated filter layer being arranged between the component sensitive to radiation and the optical filter element and at a distance from the optical filter element.

5. The semiconductor device of claim 1, wherein

the dielectric layer comprises an intermetal layer;

metal layers of the wiring and the integrated filter layer are arranged in the intermetal layer; and

the integrated filter layer is formed in a metal layer that is arranged in the intermetal layer.

6. The semiconductor device of claim 1, wherein

the substrate and the dielectric layer together comprise a thickness of less than 250 μ

m.

7. A method of producing a semiconductor device for detection of radiation, comprising:

providing a semiconductor substrate with an integrated circuit including at least one component sensitive to radiation at or near a main surface;

arranging a dielectric layer comprising at least one compound of a semiconductor material on or above the main surface;

arranging a wiring of the integrated circuit in the dielectric layer;

forming an electrically conductive through-substrate via contacting the wiring from a rear surface opposite the main surface;

arranging an optical filter element immediately on the dielectric layer above the component sensitive to radiation;

the dielectric layer being formed to include an intermetal layer and a passivation layer, the passivation layer being provided with an opening above the component sensitive to radiation, the intermetal layer being free from the passivation layer in the opening; and

the optical filter element being arranged on the intermetal layer and in the opening of the passivation layer.

8. The method of claim 7, wherein

the optical filter element is arranged on the dielectric layer before the through-substrate via is formed.

9. The method of claim 7, wherein

the optical filter element is arranged on the dielectric layer after the through-substrate via is formed.

10. The method of claim 7, further comprising:

arranging an integrated filter layer in the dielectric layer, the integrated filter layer being formed as a nano-optics filter.

11. The method of claim 10, wherein

the integrated filter layer is formed before the through-substrate via is formed.

12. A semiconductor device for detection of radiation, comprising:

a semiconductor substrate with a main surface;

a dielectric layer comprising at least one compound of a semiconductor material, the dielectric layer being arranged on or above the main surface;

an integrated circuit including at least one component sensitive to radiation, the integrated circuit being arranged in the substrate at or near the main surface;

a wiring of the integrated circuit;

the dielectric layer comprising an intermetal layer, the wiring being arranged in the intermetal layer;

an electrically conductive through-substrate via contacting the wiring;

an optical filter element arranged immediately on the dielectric layer above the component sensitive to radiation;

the dielectric layer comprising a passivation layer formed from a dielectric material that is different from the intermetal layer;

the passivation layer being arranged in or on the intermetal layer at least above the through-substrate via;

an opening in the passivation layer above the component sensitive to radiation, the intermetal layer being free from the passivation layer in the opening;

the optical filter element being arranged on the intermetal layer above or in the opening of the passivation layer; and

the wiring being arranged between the main surface and the passivation layer.