ACTIVE LED MODULE WITH LED AND TRANSISTOR FORMED ON SAME SUBSTRATE

• US 20160020248A1
• Filed: 09/28/2015
• Published: 01/21/2016
• Est. Priority Date: 01/09/2013
• Status: Active Grant

• Current Assignee: NthDegree Technologies Worldwide Inc.
• Original Assignee: NthDegree Technologies Worldwide Inc.
• Inventors: Blanchard, Richard Austin, Oraw, Bradley Steven
• Granted Patent: US 9,577,007 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: H01L 27/15 including semiconductor components having potential barriers, specially adapted for light emission
• CPC Class Codes: H01L 27/153 in a repetitive configuration, e.g. LED bars
• CPC Class Codes: H01L 33/32 containing nitrogen

Abstract

An LED module is disclosed containing an integrated driver transistor (e.g, a MOSFET) in series with an LED. In one embodiment, LED layers are grown over a substrate. The transistor regions are formed over the same substrate. After the LED layers, such as GaN layers, are grown to form the LED portion, a central area of the LED is etched away to expose a semiconductor surface in which the transistor regions are formed. A conductor connects the transistor in series with the LED. Another node of the transistor is electrically coupled to an electrode on the bottom surface of the substrate. In one embodiment, an anode of the LED is connected to one terminal of the module, one current carrying node of the transistor is connected to a second terminal of the module, and the control terminal of the transistor is connected to a third terminal of the module.

Claims

18-1. The device of claim 18 wherein the first transistor is formed in an opening in the LED such that the LED surrounds the first transistor.