SWITCHING FILM STRUCTURE FOR MAGNETIC RANDOM ACCESS MEMORY (MRAM) CELL
First Claim
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1. A magnetic random access memory (MRAM) cell, comprising:
- a magnetic tunneling junction (MTJ) comprising a pin layer, a barrier layer, a free layer, and a capping layer; and
a bidirectional diode selector, directly coupled to one of the pin layer, the barrier layer, the free layer or the capping layer of the MTJ, to enable access to the MTJ.
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Abstract
An MRAM cell may include a magnetic tunneling junction (MTJ). The MTJ includes a pin layer, a barrier layer, a free layer, and a capping layer. The MRAM cell further includes a bidirectional diode selector, directly coupled to an electrode of the MTJ, to enable access to the MTJ.
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Citations
20 Claims
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1. A magnetic random access memory (MRAM) cell, comprising:
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a magnetic tunneling junction (MTJ) comprising a pin layer, a barrier layer, a free layer, and a capping layer; and a bidirectional diode selector, directly coupled to one of the pin layer, the barrier layer, the free layer or the capping layer of the MTJ, to enable access to the MTJ. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A magnetic random access memory (MRAM) cell, comprising:
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a magnetic tunneling junction (MTJ) comprising a pin layer, a barrier layer, a free layer, and a capping layer; and means for bi-directionally accessing the MTJ, in which the means for bi-directionally accessing is directly coupled to one of the pin layer, the barrier layer, the free layer or the capping layer of the MTJ. - View Dependent Claims (13, 14, 15, 16)
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17. A method for storing data in a magnetic random access memory (MRAM) cell, comprising:
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a step for storing a memory bit in a magnetic tunneling junction (MTJ) device, the MTJ device comprising a pin layer, a barrier layer, a free layer, and a capping layer; and a step for accessing the MTJ device with a bidirectional diode selector directly coupled to one of the pin layer, the barrier layer, the free layer or the capping layer of the MTJ. - View Dependent Claims (18)
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19. A method for storing data in a magnetic random access memory (MRAM) cell, comprising:
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storing a memory bit in a magnetic tunneling junction (MTJ) device, the MTJ device comprising a pin layer, a barrier layer, a free layer, and a capping layer; and accessing the MTJ device with a bidirectional diode selector directly coupled to one of the pin layer, the barrier layer, the free layer or the capping layer of the MTJ. - View Dependent Claims (20)
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Specification