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SWITCHING FILM STRUCTURE FOR MAGNETIC RANDOM ACCESS MEMORY (MRAM) CELL

  • US 20160020250A1
  • Filed: 07/17/2014
  • Published: 01/21/2016
  • Est. Priority Date: 07/17/2014
  • Status: Active Grant
First Claim
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1. A magnetic random access memory (MRAM) cell, comprising:

  • a magnetic tunneling junction (MTJ) comprising a pin layer, a barrier layer, a free layer, and a capping layer; and

    a bidirectional diode selector, directly coupled to one of the pin layer, the barrier layer, the free layer or the capping layer of the MTJ, to enable access to the MTJ.

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