METHOD FOR PRODUCING GROUP III NITRIDE SEMICONDUCTOR AND TEMPLATE SUBSTRATE
First Claim
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1. A semiconductor substrate, comprising:
- a sapphire substrate including a c-plane main surface and comprising a groove in a surface thereof, the groove including side surfaces and a bottom surface; and
a Group III nitride semiconductor layer formed on the sapphire substrate,wherein the side surfaces of the groove are an a-plane of sapphire,wherein an axis of the Group III nitride semiconductor layer, perpendicular to one of the side surfaces of the groove, is a c-axis of Group III nitride semiconductor, andwherein a plane of the Group III nitride semiconductor, parallel to the main surface of the sapphire substrate, is an a-plane of Group III nitride semiconductor.
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Abstract
A semiconductor substrate includes a sapphire substrate including a c-plane main surface and a groove in a surface thereof, the groove including side surfaces and a bottom surface, and a Group III nitride semiconductor layer formed on the sapphire substrate. The side surfaces of the groove are an a-plane of sapphire. An axis of the Group III nitride semiconductor layer, perpendicular to one of the side surface of the groove, is a c-axis of Group III nitride semiconductor. A plane of the Group III nitride semiconductor, parallel to the main surface of the sapphire substrate, is an a-plane of Group III nitride semiconductor.
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Citations
6 Claims
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1. A semiconductor substrate, comprising:
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a sapphire substrate including a c-plane main surface and comprising a groove in a surface thereof, the groove including side surfaces and a bottom surface; and a Group III nitride semiconductor layer formed on the sapphire substrate, wherein the side surfaces of the groove are an a-plane of sapphire, wherein an axis of the Group III nitride semiconductor layer, perpendicular to one of the side surfaces of the groove, is a c-axis of Group III nitride semiconductor, and wherein a plane of the Group III nitride semiconductor, parallel to the main surface of the sapphire substrate, is an a-plane of Group III nitride semiconductor. - View Dependent Claims (2, 3, 4, 5, 6)
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Specification