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Semiconductor Device with Field Electrode and Field Dielectric

  • US 20160020287A1
  • Filed: 07/14/2015
  • Published: 01/21/2016
  • Est. Priority Date: 07/15/2014
  • Status: Active Grant
First Claim
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1. A semiconductor device, comprising:

  • a field electrode structure comprising a field electrode and a field dielectric surrounding the field electrode, wherein the field dielectric comprises a first dielectric layer and a second dielectric layer having at least one of a smaller band gap and a lower conduction band edge than the first dielectric layer; and

    a semiconductor body comprising a transistor section surrounding the field electrode structure, directly adjoining the first dielectric layer, and comprising a source zone, a first drift zone section and a body zone separating the source zone and the first drift zone section, the body zone forming a first pn junction with the source zone and a second pn junction with the first drift zone section.

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