Semiconductor Device with Field Electrode and Field Dielectric
First Claim
1. A semiconductor device, comprising:
- a field electrode structure comprising a field electrode and a field dielectric surrounding the field electrode, wherein the field dielectric comprises a first dielectric layer and a second dielectric layer having at least one of a smaller band gap and a lower conduction band edge than the first dielectric layer; and
a semiconductor body comprising a transistor section surrounding the field electrode structure, directly adjoining the first dielectric layer, and comprising a source zone, a first drift zone section and a body zone separating the source zone and the first drift zone section, the body zone forming a first pn junction with the source zone and a second pn junction with the first drift zone section.
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Accused Products
Abstract
A semiconductor device includes a field electrode structure that includes a field electrode and a field dielectric surrounding the field electrode. The field dielectric includes a first dielectric layer and a second dielectric layer having a smaller band gap and/or a lower conduction band edge than the first dielectric layer. A semiconductor body includes a transistor section that surrounds the field electrode structure and directly adjoins the first dielectric layer. The transistor section includes a source zone, a first drift zone section and a body zone separating the source zone and the first drift zone section. The body zone forms a first pn junction with the source zone and a second pn junction with the first drift zone section.
9 Citations
24 Claims
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1. A semiconductor device, comprising:
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a field electrode structure comprising a field electrode and a field dielectric surrounding the field electrode, wherein the field dielectric comprises a first dielectric layer and a second dielectric layer having at least one of a smaller band gap and a lower conduction band edge than the first dielectric layer; and a semiconductor body comprising a transistor section surrounding the field electrode structure, directly adjoining the first dielectric layer, and comprising a source zone, a first drift zone section and a body zone separating the source zone and the first drift zone section, the body zone forming a first pn junction with the source zone and a second pn junction with the first drift zone section. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19)
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20. A method of manufacturing a semiconductor device, the method comprising:
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forming first trenches extending from a main surface into a semiconductor layer of a semiconductor substrate, wherein a first horizontal extension of the first trenches parallel to the main surface of the semiconductor substrate is at most twice as large as a second horizontal extension orthogonal to the first horizontal extension; forming a first dielectric layer lining the first trenches; forming a second dielectric layer on the first dielectric layer, the second dielectric layer having at least one of a smaller band gap and a lower conduction band edge than the first dielectric layer; and
thenforming field electrodes in the first trenches and gate electrodes in second trenches. - View Dependent Claims (21, 22)
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23. An electronic assembly, comprising:
a semiconductor device that comprises; a field electrode structure comprising a field electrode and a field dielectric surrounding the field electrode, wherein the field dielectric comprises a first dielectric layer and a second dielectric layer having at least one of a smaller band gap and a lower conduction band edge than the first dielectric layer; and a semiconductor body comprising a transistor section surrounding the field electrode structure, directly adjoining the first dielectric layer, and comprising a source zone, a first drift zone section and a body zone separating the source zone and the first drift zone section, the body zone forming a first pn junction with the source zone and a second pn junction with the first drift zone section. - View Dependent Claims (24)
Specification