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THERMIONICALLY-OVERDRIVEN TUNNEL FETS AND METHODS OF FABRICATING THE SAME

  • US 20160020305A1
  • Filed: 01/09/2015
  • Published: 01/21/2016
  • Est. Priority Date: 07/21/2014
  • Status: Active Grant
First Claim
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1. A field effect transistor (FET), comprising:

  • a nanosheet stack comprising first and second stacked semiconductor channel layers, the first channel layer defining a channel region of a tunnel FET, and the second channel layer defining a channel region of a thermionic FET; and

    source and drain regions on opposite sides of the nanosheet stack such that the first and second channel layers extend therebetween, wherein a first portion of the source region adjacent the first channel layer and a second portion of the source region adjacent the second channel layer have opposite semiconductor conductivity types.

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