DEFECT FREE SINGLE CRYSTAL THIN LAYER

• US 20160027656A1
• Filed: 03/14/2013
• Published: 01/28/2016
• Est. Priority Date: 03/14/2013
• Status: Abandoned Application

• Current Assignee: King Abdullah University of Science and Technology
• Original Assignee: King Abdullah University of Science and Technology
• Inventors: EL AFANDY, Rami Tarek, OOI, Boon S.
• Application Number:
  US14/775,656
• Publication Number:
  US 20160027656A1
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: C30B 29/406 Gallium nitride
• CPC Class Codes: C30B 33/10 in solutions or melts
• CPC Class Codes: H01L 21/02002 Preparing wafers
• CPC Class Codes: H01L 21/0237 Materials
• CPC Class Codes: H01L 21/0254 Nitrides
• CPC Class Codes: H01L 21/02664 Aftertreatments planarisation in general H01L21/304
• CPC Class Codes: H01L 21/30617 Anisotropic liquid etching
• CPC Class Codes: H01L 29/2003 Nitride compounds

Abstract

A gallium nitride film can be a dislocation free single crystal, which can be prepared by irradiating a surface of a substrate and contacting the surface with an etching solution that can selectively etch at dislocations.

Claims

1. A method for preparing III-V semiconductor film comprising:

irradiating a surface of a substrate including the III-V semiconductor; and

contacting the surface of the substrate while irradiating with a solution containing an etching solution to form the film on the substrate.

2. The method of claim 1, wherein the III-V semiconductor is selected from the group consisting of indium arsenide, indium phosphide, gallium arsenide, gallium phosphide, aluminum nitride, gallium antimonide, indium antimonide, aluminum arsenide, aluminum phosphide, aluminum antimonide, indium gallium arsenide, gallium arsenide phosphide, indium gallium arsenide phosphide, indium aluminum gallium arsenide, indium arsenide phosphide, indium gallium nitride, and aluminum gallium nitride.

3. The method of claim 1, wherein the III-V semiconductor is gallium nitride.

4. The method of claim 3, wherein the substrate includes a silicon doped, n-doped, un-doped, or p-doped gallium nitride on sapphire.

5. The method of claim 3, wherein the substrate includes bulk gallium nitride.

6. The method of claim 3, wherein the substrate includes gallium nitride on silicon carbide.

7. The method of claim 3, wherein the substrate includes gallium nitride on silicon.

8. The method of claim 1, wherein the etching solution includes hydrogen fluoride and hydrogen peroxide or potassium hydroxide.

10. The method of claim 1, wherein the surface of the substrate includes a plurality of dislocations.

11. The method of claim 1, wherein the etching solution etches selectively at the dislocations.

12. The method of claim 1, wherein the surface of the substrate is irradiated by an irradiation source, wherein the irradiation source has an energy greater than the bandgap of the III-V semiconductor.

13. The method of claim 1, wherein the surface of the substrate is irradiated by an ultraviolet light source, wherein the energy of the ultraviolet light source is greater than the bandgap of the III-V semiconductor.

14. The method of claim 1, wherein the surface of the substrate is irradiated by an X-ray or a gamma ray.

16. The method of claim 12, wherein the method further comprising controlling the intensity of the irradiation source.

17. The method of claim 1, wherein a portion of the surface of the substrate is coated with an electrode.

18. The method of claim 17, wherein the material of the electrode is selected from titanium, platinum, silver, and gold.

19. The method of claim 1, wherein the method further comprising applying an electric field at the surface of the substrate.

20. The method of claim 1, wherein the method further comprises drying the substrate.

21. The method of claim 1, wherein the thickness of the III-V semiconductor film is between 10 nanometers and 1 micron.

22. The method of claim 1, wherein the method further comprises transferring the III-V semiconductor film to a second substrate.

9. (canceled)

15. (canceled)

23. A film comprising dislocation free single crystalline III-V semiconductor, wherein the dislocation free single crystalline III-V semiconductor has a thickness of between 10 nanometers and 1 micron nanometers.

24. The film of claim 23, wherein the film includes a plurality of pores.

25. The film of claim 23, wherein the III-V semiconductor is gallium nitride.

26. The film of claim 25, wherein a plurality of gallium nitride wires protrude through the dislocation free single crystalline gallium nitride.

27. The film of claim 25, wherein the film further comprises a porous gallium nitride layer underneath the dislocation free single crystalline gallium nitride.

28. A structure comprising dislocation free single crystalline III-V semiconductor on a substrate, wherein the substrate is a polymer substrate, copper substrate, silicon substrate, glass substrate, silicon carbide substrate, sapphire substrate, quartz substrate, porcelain substrate, indium phosphide substrate, gallium nitride substrate, gallium arsenide substrate, beryllium oxide substrate, aluminum nitride substrate, alumina substrate, plastic substrate, or ceramic substrate.

29. A device for growing III-V semiconductor comprising a film, wherein the film includes dislocation free single crystalline III-V semiconductor, and wherein the film has a thickness of 10 nanometers to 1 micron.

30. The device of claim 29, wherein the III-V semiconductor is gallium nitride.