PLANARIZATION METHOD, SUBSTRATE TREATMENT SYSTEM, MRAM MANUFACTURING METHOD, AND MRAM ELEMENT

• US 20160035584A1
• Filed: 09/04/2015
• Published: 02/04/2016
• Est. Priority Date: 03/07/2013
• Status: Abandoned Application

• Current Assignee: Tokyo Electron Limited, University of Hyogo
• Original Assignee: Tokyo Electron Limited, University of Hyogo
• Inventors: HARA, Kenichi, TOYODA, Noriaki, YAMADA, Isao
• Application Number:
  US14/845,617
• Publication Number:
  US 20160035584A1
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: H01L 21/32115 Planarisation
• CPC Class Codes: H01L 21/32136 using plasmas
• CPC Class Codes: H10N 50/01 Manufacture or treatment
• CPC Class Codes: H10N 50/10 Magnetoresistive devices
• CPC Class Codes: H10N 50/80 Constructional details

Abstract

Provided is a planarization method capable of reliably planarizing a metal film formed before an MTJ element of an MRAM is formed. An MTJ element is formed by a sequence of processes including: forming a Cu film to be embedded in a SiO₂ film in a wafer W; irradiating an oxygen GCIB to a surface of the Cu film to planarize the Cu film; forming a Ta film; forming a Ru film or a Ta film; irradiating the oxygen GCIB to the Ta film, the Ru film or the Ta film to planarize the Ta film, the Ru film or the Ta film; forming a PtMn film; irradiating the oxygen GCIB to a surface of the PtMn film to planarize the PtMn film; forming a CoFe thin film and a Ru thin film; and forming a CoFeB thin film, a MgO thin film and a CoFeB thin film in that order.

Claims

1. A planarization method, comprising:

irradiating an oxygen GCIB (gas cluster ion beam) to a metal film formed on a substrate, the metal film being formed before an MTJ (Magnetic Tunnel Junction) element of an MRAM (Magnetoresistive Random Access Memory) is formed.

2. The planarization method of claim 1, wherein the oxygen GCIB is irradiated to the metal film in an organic acid atmosphere.

3. The planarization method of claim 2, wherein the substrate is heated after the irradiation of the oxygen GCIB to the metal film.

4. The planarization method of claim 1, wherein a plurality of metal films is formed before the MTJ element is formed on the substrate,

after forming one metal film of the plurality of metal films and before forming another metal film that covers the one metal film, the oxygen GCIB is irradiated to the one metal film.

5. The planarization method of claim 1, wherein the oxygen GCIB is irradiated to the metal film that is formed at least immediately before the MTJ element is formed.

6. The planarization method of claim 1, wherein the substrate is heated before the irradiation of the oxygen GCIB to the metal film.

7. A substrate treatment system, comprising:

a film-forming processing chamber configured to form a metal film; and

a GCIB irradiation processing chamber configured to irradiate an oxygen GCIB,

wherein the film-forming processing chamber forms the metal film on a substrate before an MTJ element of an MRAM is formed, and

the GCIB irradiation processing chamber irradiates the oxygen GCIB to the formed metal film before the MTJ element is formed.

8. The substrate treatment system of claim 7, further comprising:

a heating processing chamber configured to heat the substrate,

wherein the heating processing chamber heats the substrate after the formation of the metal film and before the irradiation of the oxygen GCIB to the metal film.

9. An MRAM manufacturing method, comprising:

a lower electrode formation step of forming a lower electrode;

a lower metal layer formation step of forming a lower metal layer on the lower electrode;

an anti-ferromagnetic layer formation step of forming an anti-ferromagnetic layer on the lower metal layer;

an MTJ element formation step of forming an MTJ element on the anti-ferromagnetic layer; and

an upper electrode formation step of forming an upper electrode on the MTJ element;

the method further comprising a planarization step that is performed at least one of between the lower electrode formation step and the lower metal layer formation step, between the lower metal layer formation step and the anti-ferromagnetic layer formation step, and between the anti-ferromagnetic layer formation step and the MTJ element formation step,

wherein in the planarization step includes irradiating an oxygen GCIB to a formed metal film.

10. An MRAM manufacturing method comprising:

a lower electrode formation step of forming a lower electrode;

a planarization step of planarizing the lower electrode;

an MTJ element formation step of forming an MTJ element on the planarized lower electrode;

an anti-ferromagnetic layer formation step of forming an anti-ferromagnetic layer on the MTJ element;

an upper metal layer formation step of forming an upper metal layer on the anti-ferromagnetic layer; and

an upper electrode formation step of forming an upper electrode on the upper metal layer,

wherein the planarization step includes irradiating an oxygen GCIB to a formed metal film.

11. An MRAM element comprising at least an MTJ element formed on a metal film, wherein a flatness of the metal film is Ra=1.0 nm or less.