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SEMICONDUCTOR STRUCTURE AND FABRICATION METHOD THEREOF

  • US 20160035816A1
  • Filed: 07/11/2015
  • Published: 02/04/2016
  • Est. Priority Date: 07/29/2014
  • Status: Active Grant
First Claim
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1. A semiconductor structure, comprising:

  • a substrate;

    a plurality of parallel first conductive layers formed on the substrate;

    a composite magnetic structure having a plurality of magnetic layers and a plurality of insulation layers with a sandwich arrangement formed on a portion of a surface of the substrate and portions of surfaces of the plurality of the first conductive layers;

    a plurality of first conductive vias and a plurality of second conductive vias formed on the first conductive layers at both sides of the composite magnetic structure; and

    a plurality of second conductive layers formed on a top surface of the composite magnetic structure;

    top surfaces of the first conductive vias, and top surfaces of the second conductive vias to form at least one coil structure wrapping around the composite magnetic structure.

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