FIELD PLATE TRENCH TRANSISTOR AND METHOD FOR PRODUCING IT

• US 20160035862A1
• Filed: 10/14/2015
• Published: 02/04/2016
• Est. Priority Date: 08/31/2005
• Status: Active Grant

• Current Assignee: Infineon Technologies Austria Ag (Infineon Technologies AG)
• Original Assignee: Infineon Technologies Austria Ag (Infineon Technologies AG)
• Inventors: Hirler, Franz, Rieger, Walter, Meyer, Thorsten, Klein, Wolfgang, Pfirsch, Frank
• Granted Patent: US 9,373,700 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: H01L 27/04 the substrate being a semiconductor body
• CPC Class Codes: H01L 27/0727 in combination with diodes, or capacitors or resistors
• CPC Class Codes: H01L 29/0696 of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
• CPC Class Codes: H01L 29/0878 Impurity concentration or distribution
• CPC Class Codes: H01L 29/404 Multiple field plate structures
• CPC Class Codes: H01L 29/407 Recessed field plates, e.g. trench field plates, buried field plates
• CPC Class Codes: H01L 29/42368 the thickness being non-uniform
• CPC Class Codes: H01L 29/66734 with a step of recessing the gate electrode, e.g. to form a trench gate electrode
• CPC Class Codes: H01L 29/732 Vertical transistors
• CPC Class Codes: H01L 29/735 Lateral transistors
• CPC Class Codes: H01L 29/7803 structurally associated with at least one other device assemblies H01L25/00; integrated circuits H01L27/00
• CPC Class Codes: H01L 29/7808 the other device being a breakdown diode, e.g. Zener diode
• CPC Class Codes: H01L 29/7813 with trench gate electrode, e.g. UMOS transistors trench gate electrodes per se H01L29/4236
• CPC Class Codes: H01L 29/861 Diodes

Abstract

A field plate trench transistor having a semiconductor body. In one embodiment the semiconductor has a trench structure and an electrode structure embedded in the trench structure. The electrode structure being electrically insulated from the semiconductor body by an insulation structure and having a gate electrode structure and a field electrode structure. The field plate trench transistor has a voltage divider configured such that the field electrode structure is set to a potential lying between source and drain potentials.

Claims

1. A method of manufacturing a semiconductor transistor, comprising:

forming a trench structure;

forming a field electrode structure embedded in the trench structure, the field electrode structure being electrically insulated from a semiconductor body by an insulation structure; and

forming a voltage divider between a source terminal and a drain terminal,

the voltage divider including a series circuit comprising at least one resistor and at least one diode, the series circuit being connected between the source and drain terminals, wherein

the field electrode structure is electrically connected to the voltage divider, and the at least one diode is a body substrate diode.

2. The method of claim 1, further comprising dividing the field electrode structure into a plurality of field electrode regions arranged vertically one above another and dividing the voltage divider into a plurality of voltage divider regions, each voltage divider region being electrically connected to a field electrode region or integrated into the latter, so that at least two different field electrode regions are at different potentials.

3. The method of claim 2, further comprising electrically insulating the different field electrode regions within the trench structure from one another, and providing the voltage divider outside the field electrode structure.

4. The method of claim 1, wherein the body substrate diode is formed by the pn junction between a body well of a first conduction type provided in a mesa structure, and the part of the semiconductor body of a second conduction type lying below the body well.

5. The method of claim 4, wherein the at least one resistor comprises a resistance of the body well in the mesa structure.

6. The method of claim 1, further comprising forming the at least one resistor at least partly as a resistance element in a mesa structure.

7. The method of claim 1, wherein the at least one diode is a diode in silicon.

8. The method of claim 1, wherein the at least one diode is arranged at an edge of a chip.

9. The method of claim 1, wherein the at least one diode is a diode chain.

10. The method of claim 1, further comprising setting a mesa width outside a cell array region greater than in the cell array region.

11. A method of manufacturing a field plate trench transistor, comprising:

forming a trench structure;

forming a field electrode structure embedded in the trench structure, the field electrode structure being electrically insulated from the semiconductor body by an insulation structure; and

forming a voltage divider lying between a source terminal and a drain terminal and/or a gate terminal and a drain terminal,

wherein the voltage divider is realized as a series circuit comprising a plurality of diodes, the series circuit being connected between the source and drain terminals,

the field electrode structure is electrically connected to the voltage divider, and the plurality of diodes comprise a body substrate diode.

12. The method of claim 11, further comprising dividing the field electrode structure into a plurality of field electrode regions arranged vertically one above another and dividing the voltage divider into a plurality of voltage divider regions, each voltage divider region being electrically connected to a field electrode region or integrated into the latter, so that at least two different field electrode regions are at different potentials.

13. The method of claim 12, further comprising electrically insulating the different field electrode regions within the trench structure from one another, and providing the voltage divider outside the field electrode structure.

14. The method of claim 11, wherein the body substrate diode is formed by the pn junction between a body well of a first conduction type provided in a mesa structure, and the part of the semiconductor body of a second conduction type lying below the body well.

15. The method of claim 14, wherein the at least one resistor comprises a resistance of the body well in the mesa structure.

16. The method of claim 11, forming the at least one resistor at least partly as a resistance element provided in a mesa structure.

17. The method of claim 11, wherein the plurality of diodes are diodes in silicon.

18. The method of claim 11, wherein the plurality of diodes are arranged at an edge of a chip.

19. The method of claim 11, wherein the plurality of diodes form a diode chain.

20. The method of claim 11, further comprising setting a mesa width outside a cell array region greater than in the cell array region.