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GALNASSB SOLID SOLUTION-BASED HETEROSTRUCTURE, METHOD FOR PRODUCING SAME AND LIGHT EMITTING DIODE BASED ON SAID HETEROSTRUCTURE

  • US 20160035931A1
  • Filed: 09/10/2013
  • Published: 02/04/2016
  • Est. Priority Date: 09/07/2012
  • Status: Abandoned Application
First Claim
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1. A heterostructure based on a GaInAsSb solid solution, the hetero structure comprising:

  • a substrate containing GaSb;

    a buffer layer which contains a GaInAsSb solid solution, the buffer layer being disposed over the substrate;

    an active layer which contains a GaInAsSb solid solution, the active layer being disposed over the buffer layer;

    a confining layer for localizing major carriers, the confining layer containing a AlGaAsSb solid solution and being disposed over the active layer;

    a contact layer containing GaSb, the contact layer being disposed over the confining layer,wherein the buffer layer contains less indium (In) than the active layer.

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