Directly Heated RF Phase Change Switch

• US 20160035973A1
• Filed: 06/05/2015
• Published: 02/04/2016
• Est. Priority Date: 06/06/2014
• Status: Active Grant

• Current Assignee: Board of Regents of the University of Michigan (University of Michigan)
• Original Assignee: Board of Regents of the University of Michigan (University of Michigan)
• Inventors: Raieszadeh, Mina, Shim, Yonghyun, Wang, Muzhi
• Granted Patent: US 9,419,213 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: H10N 70/231 based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
• CPC Class Codes: H10N 70/253 having three or more electrodes, e.g. transistor-like devices
• CPC Class Codes: H10N 70/8413 adapted for resistive heating
• CPC Class Codes: H10N 70/8613 Heating or cooling means other than resistive heating electrodes, e.g. heater in parallel
• CPC Class Codes: H10N 70/8828 Tellurides, e.g. GeSbTe

Abstract

An RF switch is provided with a direct heating method. The RF switch is comprised of two RF electrodes disposed on opposing sides of a phase change element. Depending on the state of the phase change material, the RF electrodes form a conductive path through the phase change material for an RF signal. To control the state of the phase change material, the RF switch further includes a heater formed from two heater electrodes. The two heater electrodes are configured to draw a current through the phase change element in a direction transverse to the conductive path.

Claims

1. An RF switch having two ports, comprising:

a substrate;

a bottom heater electrode disposed onto a surface of the substrate;

a phase change material disposed onto the bottom heater electrode;

an input electrode and an output electrode disposed on opposing sides of the phase change material and operable to form a conductive path for an RF signal through the phase change material; and

a top heater electrode disposed onto the phase change material, wherein the top and bottom heater electrodes are configured to draw a current through the phase change material in a direction transverse to the conductive path.

2. The RF switch of claim 1 wherein the top heater electrode and the bottom heater electrode each having at least one dimension that narrows from both sides as it approaches a center of the phase change material, thereby concentrating the heat on the phase change material.

3. The RF switch of claim 1 wherein at least one of the top heater electrode and the bottom heater electrode having shape of a bow tie.

4. The RF switch of claim 1 wherein at least one of the top heater electrode or the bottom heater electrode overlaps with at least a portion of the input electrode and at least a portion of the output electrode and the at least one top heater electrode or the bottom heater electrode is electrically separated by the phase change layer from the overlapped portions of the input electrode and the output electrode.

5. The RF switch of claim 1 further comprises a passivation layer disposed between the bottom heater electrode and the substrate.

6. The RF switch of claim 1 wherein the phase change material is further defined as germanium telluride.

7. The RF switch of claim 1 wherein the input electrode and the output electrode abut opposing side surfaces of the phase change material, such that a portion of the input electrode and a portion of the output electrode protrude into side surfaces of the phase change material.

8. The RF switch of claim 1 wherein the input electrode and the output electrode are comprised of gold and the top heater electrode and the bottom heater electrode are comprised of titanium nitride.

9. The RF switch of claim 1 further comprises a protection layer disposed on the top heater electrode and the phase change material.

10. An RF switch having two RF ports, comprising:

a substrate;

a bottom heater electrode disposed onto a surface of the substrate and configured to concentrate heat at a center of the bottom heater electrode;

a phase change material disposed onto the bottom heater electrode;

an input electrode disposed on the phase change layer and configured to conduct an RF signal;

an output electrode disposed on the phase change layer and configured to conduct an RF signal, wherein the input electrode and the output electrode abut opposing side surfaces of the phase change material; and

a top heater electrode disposed onto the phase change material and configured to concentrate heat at a center of the top heater electrode, wherein the top and bottom heater are operable to draw a current through the phase change material in a direction transverse to the conductive path.

11. The RF switch of claim 10 wherein a portion of the input electrode protrudes into the phase change material and a portion of the output electrode protrudes into the phase change material.

12. An RF switch having two ports, comprising:

a substrate;

a bottom RF electrode disposed onto a surface of the substrate;

a phase change material disposed onto the bottom RF electrode;

two heater electrodes disposed on the phase change layer, wherein the two heater electrodes are arranged on opposing sides of the phase change material and form an electrical heating path therethrough; and

a top RF electrode disposed onto the phase change material, wherein the top and bottom RF electrodes are configured to form an RF conductive path which is transverse in relation to the electrical heating path.

13. The RF switch of claim 12 wherein the two heater electrodes each having at least one dimension that narrows from both sides as it approaches a center of the phase change material, thereby concentrating the heat on the phase change material.

14. The RF switch of claim 12 wherein at least one of the top RF electrode or the bottom RF electrode overlaps with at least a portion of the two heater electrodes and the at least one top RF electrode or the bottom RF electrode is electrically separated by the phase change layer from the overlapped portions of the two heater electrodes.

15. The RF switch of claim 12 further comprises a passivation layer disposed between the bottom RF electrode and the substrate.

16. The RF switch of claim 12 wherein the phase change material is further defined as germanium telluride.

17. The RF switch of claim 12 wherein two heater electrodes abut opposing side surfaces of the phase change material, such that a portion of each heater electrode protrude into side surfaces of the phase change material.

18. The RF switch of claim 12 wherein the top RF electrode and the bottom RF electrode are comprised of gold and the two heater electrodes are comprised of titanium nitride.

19. The RF switch of claim 12 further comprises a protection layer disposed on the top RF electrode and the phase change material.