MEMORY DEVICE INCLUDING REFERENCE VOLTAGE GENERATOR
First Claim
1. A memory device comprising:
- a first memory cell array comprising memory cells of a single-ended bitline structure;
a second memory cell array comprising memory cells of a single-ended bitline structure;
a reference voltage generator configured to output a bitline voltage of a selected one of the first and second memory cell arrays as a sensing voltage according to an array select signal and to output a bitline voltage of an unselected memory cell array as a reference voltage; and
a differential sense amplifier configured to amplify and output a difference between the sensing voltage and the reference voltage,wherein logic states of the sensing voltage and the reference voltage are complementary to each other.
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Accused Products
Abstract
A memory device includes a first memory cell array including memory cells of a single-ended bitline structure, a second memory cell array including memory cells of a single-ended bitline structure, a reference voltage generator configured to output a bitline voltage of a selected one of the first and second memory cell arrays as a sensing voltage according to an array select signal and output a bitline voltage of an unselected memory cell array as a reference voltage, and a differential sense amplifier configured to amplify and output a difference between the sensing voltage and the reference voltage. Logic states of the sensing voltage and the reference voltage are complementary to each other.
12 Citations
25 Claims
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1. A memory device comprising:
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a first memory cell array comprising memory cells of a single-ended bitline structure; a second memory cell array comprising memory cells of a single-ended bitline structure; a reference voltage generator configured to output a bitline voltage of a selected one of the first and second memory cell arrays as a sensing voltage according to an array select signal and to output a bitline voltage of an unselected memory cell array as a reference voltage; and a differential sense amplifier configured to amplify and output a difference between the sensing voltage and the reference voltage, wherein logic states of the sensing voltage and the reference voltage are complementary to each other. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A memory device of an open bitline structure, comprising:
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an upper memory cell array comprising memory cells of a single-ended bitline structure; a lower memory cell array comprising memory cells of a single-ended bitline structure; an address decoder configured to output an array select signal selecting one of the upper and lower memory cell arrays in response to an address signal; a reference voltage generator configured to output a bitline voltage of a selected memory cell array as a sensing voltage and to output a bitline voltage of an unselected memory cell array as a reference voltage according to the array select signal; and a differential sense amplifier configured to amplify and output a difference between the sensing voltage and the reference voltage, wherein logic states of the sensing voltage and the reference voltage are complementary to each other. - View Dependent Claims (11, 12, 13, 14, 15)
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16-20. -20. (canceled)
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21. A memory device comprising:
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a first memory cell array comprising memory cells of a single-ended bitline structure and configured to output a first bitline voltage; a second memory cell array comprising memory cells of a single-ended bitline structure and configured to output a second bitline voltage; a reference voltage generator configured to output a selected one of the first and second bitline voltages as a sensing voltage according to an array select signal and to output the other of the first and second bitline voltages as a reference voltage after adjusting the bitline voltage of the other of the first and second bitline voltages according to the selected one of the first and second bitline voltages; and a differential sense amplifier configured to amplify and output a difference between the sensing voltage and the reference voltage. - View Dependent Claims (22, 23, 24, 25)
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Specification