LOW-K DIELECTRIC FILM FORMATION
First Claim
1. A method comprising:
- providing a precursor film including a dielectric matrix and a porogen;
exposing the precursor film to a downstream plasma generated from a process gas including a reducing agent and a weak oxidizer to thereby remove porogen and form a porous dielectric film.
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Abstract
Methods and apparatus for fabricating a porous, low-k dielectric film are described. In some implementations, the methods include exposing a precursor film including a porogen within a matrix to a plasma generated from a weak oxidizer. The plasma may also include reducing agent species. In some implementations, the plasma is a downstream plasma. Implementations of the method involve selectively removing regions of isolated, organic porogen co-existing within a silicon-organic matrix by exposure to the plasma while preserving the organic groups bonded to the backbone of the silicon matrix. The methods also result in low damage to the dielectric film. In some implementations, plasma exposure is followed by exposure to ultraviolet (UV) radiation.
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Citations
17 Claims
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1. A method comprising:
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providing a precursor film including a dielectric matrix and a porogen; exposing the precursor film to a downstream plasma generated from a process gas including a reducing agent and a weak oxidizer to thereby remove porogen and form a porous dielectric film. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. An apparatus comprising:
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a processing chamber; a substrate support for holding a substrate in the processing chamber; a remote plasma source over the substrate support; a showerhead between the remote plasma source and the substrate support; and a controller with instructions to perform the following operations; (a) receiving a substrate including a precursor film including a dielectric matrix and a porogen; (b) inletting reducing agent and a weak oxidizer gases into the remote plasma source; (c) applying a power to the remote plasma generator to generate plasma species from the reducing agent and a weak oxidizer gases; (d) directing remote plasma species including weak oxidizer and reducing agent species through the showerhead; and (e) exposing a substrate to the remote plasma species in (c). - View Dependent Claims (13, 14, 15, 16, 17)
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Specification