METHOD FOR FORMING BASE FILM OF GRAPHENE, GRAPHENE FORMING METHOD, AND APPARATUS FOR FORMING BASE FILM OF GRAPHENE

• US 20160042958A1
• Filed: 08/05/2015
• Published: 02/11/2016
• Est. Priority Date: 08/11/2014
• Status: Active Grant

• Current Assignee: Tokyo Electron Limited
• Original Assignee: Tokyo Electron Limited
• Inventors: MATSUMOTO, Takashi, NISHIDE, Daisuke, KAGAYA, Munehito, IFUKU, Ryota
• Granted Patent: US 9,702,039 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: C01B 32/186 by chemical vapour deposition [CVD]
• CPC Class Codes: C23C 16/0218 in a reactive atmosphere C23C16/0227 takes precedence
• CPC Class Codes: C23C 16/0281 of metallic sub-layers C23C16/029 takes precedence
• CPC Class Codes: C23C 16/18 from metallo-organic compounds
• CPC Class Codes: C23C 16/26 Deposition of carbon only
• CPC Class Codes: C23C 16/45523 Pulsed gas flow or change of composition over time
• CPC Class Codes: C23C 16/46 characterised by the method used for heating the substrate C23C16/48, C23C16/50 take precedence
• CPC Class Codes: C23C 16/56 After-treatment
• CPC Class Codes: H01L 21/28556 by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD H01L21/28518 - H01L21/28537 and H01L21/28568 take precedence
• CPC Class Codes: H01L 21/67103 mainly by conduction
• CPC Class Codes: H01L 21/68742 characterised by a lifting arrangement, e.g. lift pins
• CPC Class Codes: H01L 21/76864 Thermal treatment
• CPC Class Codes: H01L 21/76876 for deposition from the gas phase, e.g. CVD
• CPC Class Codes: H01L 23/53276 containing carbon, e.g. fullerenes superconducting fullerenes H10N60/853
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A method for forming a base film of a graphene includes: forming a metal film as a base film of a graphene on a substrate by chemical vapor deposition (CVD) of an organic metal compound using a hydrogen gas and an ammonia gas; heating the substrate to a temperature at which impurities included in the formed metal film are eliminated as a gas; and heating the substrate to a temperature at which crystal grains of metal are grown in the metal film, wherein the temperature of the substrate in the heating the substrate to a temperature at which crystal grains of metal are grown in the metal film is higher than the temperature of the substrate in the heating the substrate to a temperature at which impurities included in the formed metal film are eliminated as a gas.

Claims

1. A method for forming a base film of a graphene, comprising:

forming a metal film as a base film of a graphene on a substrate by chemical vapor deposition (CVD) of an organic metal compound using a hydrogen gas and an ammonia gas;

heating the substrate to a temperature at which impurities included in the formed metal film are eliminated as a gas; and

heating the substrate to a temperature at which crystal grains of metal are grown in the metal film,

wherein the temperature of the substrate in the heating the substrate to a temperature at which crystal grains of metal are grown in the metal film is higher than the temperature of the substrate in the heating the substrate to a temperature at which impurities included in the formed metal film are eliminated as a gas.

2. The method of claim 1, wherein the forming a metal film, the heating the substrate to a temperature at which impurities included in the formed metal film are eliminated as a gas, and the heating the substrate to a temperature at which crystal grains of metal are grown in the metal film are repeatedly executed in this order.

3. The method of claim 2, wherein a ratio of a flow rate of the ammonia gas to a flow rate of the hydrogen gas is changed when the forming a metal film is repeated.

4. The method of claim 3, wherein the ratio of the flow rate of the ammonia gas to the flow rate of the hydrogen gas is increased when the forming a metal film is repeated.

5. A graphene forming method, comprising:

forming a metal film as a base film of a graphene on a substrate; and

forming the graphene on the metal film,

wherein the forming a metal film comprises;

forming the metal film on the substrate by CVD of an organic metal compound using a hydrogen gas and an ammonia gas;

heating the substrate to a temperature at which impurities included in the formed metal film are eliminated as a gas; and

heating the substrate to a temperature at which crystal grains of metal are grown in the metal film,

wherein the temperature of the substrate in the heating the substrate to a temperature at which crystal grains of metal are grown in the metal film is higher than the temperature of the substrate in the heating the substrate to a temperature at which impurities included in the formed metal film are eliminated as a gas.

6. The method of claim 5, wherein, in the forming a metal film, the forming the metal film, heating the substrate to a temperature at which impurities included in the formed metal film are eliminated as a gas, and the heating the substrate to a temperature at which crystal grains of metal are grown in the metal film are repeatedly executed in this order.

7. The method of claim 6, wherein, in the forming a metal film, a ratio of a flow rate of the ammonia gas to a flow rate of the hydrogen gas is changed when the forming the metal film is repeated.

8. The method of claim 7, wherein, in the forming a metal film, the ratio of the flow rate of the ammonia gas to the flow rate of the hydrogen gas is increased when forming the metal film is repeated.

9. An apparatus for forming a base film of a graphene, comprising:

a CVD module configured to form a metal film as a base film of a graphene on a substrate by CVD of an organic metal compound using a hydrogen gas and an ammonia gas;

a first heating module configured to heat the substrate to a temperature at which impurities included in the formed metal film are eliminated as a gas; and

a second heating module configured to heat the substrate to a temperature at which crystal grains of metal are grown in the metal film,

wherein the temperature of the substrate heated in the second heating module is higher than the temperature of the substrate heated in the first heating module.

10. The apparatus of claim 9, wherein the substrate circulates the CVD module, the first heating module and the second heating module in this order, and the circulation of the substrate is repeated.

11. The apparatus of claim 10, wherein, in the CVD module, a ratio of a flow rate of the ammonia gas to a flow rate of the hydrogen gas is changed when the formation of the metal film is repeated.

12. The apparatus of claim 11, wherein in the CVD module, the ratio of the flow rate of the ammonia gas to the flow rate of the hydrogen gas is increased when the formation of the metal film is repeated.