METHOD OF REMOVING OXIDE ON SEMICONDUCTOR SURFACE BY LAYER OF SULFUR
First Claim
1. A method for removing an oxide on a semiconductor material comprising:
- providing ammonia and hydrogen sulfide on a semiconductor surface overlaid with an oxide;
reacting the ammonia with the hydrogen sulfide to form an ammonium sulfide; and
removing the oxide on the semiconductor surface by the ammonium sulfide.
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Accused Products
Abstract
Embodiments of the present disclosure relate generally to a method of passivating and/or removing oxides on a semiconductor surface by using ammonium sulfide, the ammonium sulfide is formed by reacting ammonia and hydrogen sulfide in a semiconductor processing chamber, therefore the ammonium sulfide can be used to clean and remove oxides on a semiconductor surface without the concern of ESH and storage, the ammonium sulfide can also be used to passivate a semiconductor surface by forming a layer of sulfur, and thus preventing the reformation of native oxides, the layer of sulfur can be optionally removed to reduce the thickness of the semiconductor material.
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Citations
20 Claims
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1. A method for removing an oxide on a semiconductor material comprising:
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providing ammonia and hydrogen sulfide on a semiconductor surface overlaid with an oxide; reacting the ammonia with the hydrogen sulfide to form an ammonium sulfide; and removing the oxide on the semiconductor surface by the ammonium sulfide. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method for passivating a semiconductor material comprising:
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providing ammonia and hydrogen sulfide on a semiconductor surface; and reacting the ammonia with the hydrogen sulfide to form a layer of sulfur on the semiconductor surface as a passivation layer over the semiconductor surface. - View Dependent Claims (9, 10, 11, 12)
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13. A method for reducing the thickness of a semiconductor material comprising:
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providing ammonia and hydrogen sulfide on a semiconductor surface of a semiconductor material; reacting the ammonia with the hydrogen sulfide to form a layer of sulfur on the semiconductor surface; and removing the layer of sulfur and thereby reducing the thickness of the semiconductor material. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20)
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Specification