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METHOD OF REMOVING OXIDE ON SEMICONDUCTOR SURFACE BY LAYER OF SULFUR

  • US 20160042966A1
  • Filed: 08/07/2014
  • Published: 02/11/2016
  • Est. Priority Date: 08/07/2014
  • Status: Active Grant
First Claim
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1. A method for removing an oxide on a semiconductor material comprising:

  • providing ammonia and hydrogen sulfide on a semiconductor surface overlaid with an oxide;

    reacting the ammonia with the hydrogen sulfide to form an ammonium sulfide; and

    removing the oxide on the semiconductor surface by the ammonium sulfide.

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