FILM FORMATION METHOD

• US 20160047037A1
• Filed: 04/17/2013
• Published: 02/18/2016
• Est. Priority Date: 04/17/2013
• Status: Abandoned Application

• Current Assignee: Kochi Prefectural Public University Corporation, Kyoto University, Toshiba Mitsubishi-Electric Industrial Systems Corporation (Toshiba Corporation)
• Original Assignee: Kochi Prefectural Public University Corporation, Kyoto University, Toshiba Mitsubishi-Electric Industrial Systems Corporation (Toshiba Corporation)
• Inventors: ORITA, Hiroyuki, SHIRAHATA, Takahiro, KAWAHARAMURA, Toshiyuki, HIRAMATSU, Takahiro, FUJITA, Shizyo
• Application Number:
  US14/782,229
• Publication Number:
  US 20160047037A1
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: C23C 16/4486 by producing an aerosol and subsequent evaporation of the droplets or particles
• CPC Class Codes: C23C 16/455 characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
• CPC Class Codes: C23C 16/50 using electric discharges generation and control of plasma in discharge tubes for surface treatment H01J37/32, H01J37/34
• CPC Class Codes: C23C 18/1216 Metal oxides C23C18/1212 takes precedence
• CPC Class Codes: C23C 18/145 Radiation by charged particles, e.g. electron beams or ion irradiation

Abstract

In a film formation method, a mist of a solution is sprayed onto a substrate to form a film on the substrate. A film formation is then suspended. The substrate is then exposed to plasma.

Claims

1. A film formation method comprising the steps of:

(A) spraying a mist of a solution onto a substrate (10) to form a film on said substrate;

(B) suspending said step (A); and

(C) after said step (B), exposing said substrate to plasma.

2. The film formation method according to claim 1, further comprising the step of

(D) suspending said step (C), wherein

a series of steps from said step (A) to said step (D) is set to one cycle, and the series of steps is repeated for at least two cycles.

3. The film formation method according to claim 1, wherein

said step (B) is a step of moving said substrate from a spraying region in which said solution is sprayed to a non-spraying region in which said solution is not sprayed.

4. The film formation method according to claim 1, wherein

said step (B) is a step of stopping spraying of said solution onto said substrate.

5. The film formation method according to claim 1, wherein

said step (C) is a step of performing exposure to said plasma with use of gas containing a noble gas as a plasma generating gas.

6. The film formation method according to claim 1, wherein

said step (C) is a step of performing exposure to said plasma with use of gas containing an oxidizing agent as a plasma generating gas.