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METHOD AND APPARATUS OF PROCESSING WAFERS WITH COMPRESSIVE OR TENSILE STRESS AT ELEVATED TEMPERATURES IN A PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION SYSTEM

  • US 20160049323A1
  • Filed: 08/12/2015
  • Published: 02/18/2016
  • Est. Priority Date: 08/15/2014
  • Status: Active Grant
First Claim
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1. An electrostatic chuck, comprising:

  • a chuck body coupled to a support stem, the chuck body having a substrate supporting surface, and the chuck body has a volume resistivity value of about 1×

    107 ohm-cm to about 1×

    1015 ohm-cm in a temperature of about 250°

    C. to about 700°

    C.; and

    an electrode embedded in the body, and the electrode is coupled to a power supply.

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