METHOD AND APPARATUS OF PROCESSING WAFERS WITH COMPRESSIVE OR TENSILE STRESS AT ELEVATED TEMPERATURES IN A PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION SYSTEM
First Claim
1. An electrostatic chuck, comprising:
- a chuck body coupled to a support stem, the chuck body having a substrate supporting surface, and the chuck body has a volume resistivity value of about 1×
107 ohm-cm to about 1×
1015 ohm-cm in a temperature of about 250°
C. to about 700°
C.; and
an electrode embedded in the body, and the electrode is coupled to a power supply.
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Accused Products
Abstract
Embodiments of the present disclosure provide an electrostatic chuck for maintaining a flatness of a substrate being processed in a plasma reactor at high temperatures. In one embodiment, the electrostatic chuck comprises a chuck body coupled to a support stem, the chuck body having a substrate supporting surface, and the chuck body has a volume resistivity value of about 1×107 ohm-cm to about 1×1015 ohm-cm in a temperature of about 250° C. to about 700° C., and an electrode embedded in the body, the electrode is coupled to a power supply. In one example, the chuck body is composed of an aluminum nitride material which has been observed to be able to optimize chucking performance around 600° C. or above during a deposition or etch process, or any other process that employ both high operating temperature and substrate clamping features.
34 Citations
20 Claims
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1. An electrostatic chuck, comprising:
-
a chuck body coupled to a support stem, the chuck body having a substrate supporting surface, and the chuck body has a volume resistivity value of about 1×
107 ohm-cm to about 1×
1015 ohm-cm in a temperature of about 250°
C. to about 700°
C.; andan electrode embedded in the body, and the electrode is coupled to a power supply. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. An electrostatic chuck, comprising:
a chuck body coupled to a support stem, the chuck body having a substrate supporting surface, wherein the chuck body has a volume resistivity value of about 1×
107 ohm-cm to about 1×
1015 ohm-cm in a temperature of about 250°
C. to about 700°
C., and a heat conductivity value about 60 W/m-K and 190 W/m-K, and wherein the chuck body is composed of aluminum nitride comprising at least Si, Fe, Ca, and Y.
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16. An electrostatic chuck, comprising:
an aluminum nitride body having a substrate supporting surface, wherein the aluminum nitride body has a volume resistivity value of about 1×
109 ohm-cm to about 1×
1012 ohm-cm in a temperature of about 450°
C. to about 650°
C., wherein at least the substrate supporting surface is coated with an insulating layer.- View Dependent Claims (17, 18, 19, 20)
Specification