×

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

  • US 20160049478A1
  • Filed: 04/03/2015
  • Published: 02/18/2016
  • Est. Priority Date: 08/18/2014
  • Status: Abandoned Application
First Claim
Patent Images

1. A method for fabricating a semiconductor device, the method comprising:

  • forming a gate insulation layer on a substrate including a first region and a second region;

    forming a first gate conductive layer and a capping layer on the first region and the second region and heat-treating the substrate;

    removing the capping layer from the first region and the second region;

    forming a second gate conductive layer on the first region and the second region;

    nitriding the second gate conductive layer; and

    forming a third gate conductive layer on the second region.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×