Optical Sensor and Manufacturing Method Thereof

• US 20160049529A1
• Filed: 08/11/2015
• Published: 02/18/2016
• Est. Priority Date: 08/12/2014
• Status: Active Grant

• Current Assignee: Personal Genomics, Inc.
• Original Assignee: Personal Genomics, Inc.
• Inventors: YU, Teng-Chien, YANG, Ming-Sheng, LIN, Sheng-Fu
• Granted Patent: US 9,812,597 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: G01N 21/6454 using an integrated detector array
• CPC Class Codes: G01N 21/648 using evanescent coupling or surface plasmon coupling for the excitation of fluorescence
• CPC Class Codes: G01N 21/7703 using reagent-clad optical fibres or optical waveguides using measurement of total internal reflection or attenuated total reflection G01N21/552; optical fibres or waveguides per se G02B
• CPC Class Codes: G02B 6/1226 involving surface plasmon interaction
• CPC Class Codes: G02B 6/1228 Tapered waveguides, e.g. integrated spot-size transformers for coupling with fibres G02B6/305
• CPC Class Codes: G02B 6/30 for use between fibre and thin-film device
• CPC Class Codes: H01L 31/02327 the optical elements being integrated or being directly associated to the device, e.g. back reflectors optical coatings H01L31/0216

Abstract

Some embodiments of the present disclosure, provide an optical sensor. The optical sensor includes a semiconductive substrate. A light sensing region is on the semiconductive substrate. A waveguide region is configured to guide light from a wave insert, portion through a waveguide portion and to a sample holding portion. The waveguide portion includes a first dielectric layer including a first refractive index. A second dielectric layer includes a second refractive index. The second refractive index is smaller than the first refractive index. A first interconnect portion is positioned in the waveguide portion, configured to transmit electrical signal from the light sensing region to an external circuit. The sample holding portion is over the light sensing region.

Claims

1. An optical sensor, comprising:

a semiconductive substrate;

a light sensing region on the semiconductive substrate;

a waveguide region configured to guide light from a wave insert portion. through a waveguide portion and to a sample holding portion, and the waveguide portion comprising;

a first dielectric layer comprising a first refractive index; and

a second dielectric layer comprising a second refractive index,

wherein the second refractive index is smaller than the first refractive index; and

a first interconnect portion positioned in the waveguide portion, configured to transmit electrical signal from the light sensing region to an external circuit, wherein the sample holding portion locates above the light sensing region.

2. The optical sensor of claim 1, further comprising a second interconnect portion above the waveguide region.

3. The optical sensor of claim 2, wherein the second interconnect portion is electrically connected to the light sensing region.

4. The optical sensor of claim 1, wherein the first interconnect portion comprises a conductive layer disposed in the second dielectric layer.

5. The optical sensor of claim 4, wherein the conductive layer is disposed at a bottom of the waveguide region.

6. The optical sensor of claim 5, wherein the conductive, layer comprises an aperture.

7. The optical sensor of claim 1, wherein the sample holding portion comprises a bottom approximately at an interface between the first dielectric layer and the second dielectric layer.

8. The optical sensor of claim 1, further comprising a reflective structure aligned to a boundary of the wave insert portion.

9. The optical sensor of claim 1, wherein the first interconnect portion comprises a via structure in the first dielectric layer.

10. The optical sensor of claim 1 further comprising a dielectric column on top of the wave insert portion.

11. A semiconductor device, comprising:

a semiconductive substrate;

a dielectric layer over the semiconductive substrate;

a reflective structure in the dielectric layer;

a waveguide region configured to guide light from a wave insert portion. through a waveguide portion and to a sample holding portion, and the waveguide portion comprising the dielectric layer and the reflective structure; and

a light sensing region over the semiconductive substrate, and the waveguide region disposed above the light sensing region.

12. The semiconductor device of claim 11, wherein the light sensing region comprises a multi-junction photodiode.

13. The semiconductor device of claim 11, further comprising an interconnect region below the waveguide region, and the interconnect region being disposed above the light sensing region.

14. The semiconductor device of claim 13, wherein the reflective structure in the dielectric layer is not electrically connected to the light sensing region.

15. The semiconductor device of claim 13, further comprising a filter layer between the interconnect region and the waveguide region.

16. The semiconductor device of claim 11, wherein the wave insert portion comprises a grating.

17. The semiconductor device of claim 11, wherein the dielectric layer comprises a core layer and a cladding layer.

18. The semiconductor device of claim 17, wherein a ratio between a total area of the core layer and a total area of the reflective structure in the cladding layer at an interface between the core layer and the cladding layer is greater than about 10.

19. The semiconductor device of claim 11, wherein the dielectric layer comprises a plurality of layers having at least two different refractive indices.

20. The semiconductor device of claim 11, Wherein the sample holding portion is surrounded by a portion of the dielectric layer.