Method for Producing a Thin-Film Semiconductor Body and Thin-Film Semiconductor Body

• US 20160049550A1
• Filed: 10/29/2015
• Published: 02/18/2016
• Est. Priority Date: 03/03/2011
• Status: Active Grant

• Current Assignee: Osram Opto Semiconductors GmbH (Ams-Osram AG)
• Original Assignee: Osram Opto Semiconductors GmbH (Ams-Osram AG)
• Inventors: Leirer, Christian, Vogl, Anton, Biebersdorf, Andreas, Butendeich, Rainer, Rumbolz, Christian
• Granted Patent: US 9,972,748 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: H01L 21/0237 Materials
• CPC Class Codes: H01L 21/02458 Nitrides
• CPC Class Codes: H01L 21/02494 Structure
• CPC Class Codes: H01L 21/02502 consisting of two layers
• CPC Class Codes: H01L 21/0254 Nitrides
• CPC Class Codes: H01L 21/02664 Aftertreatments planarisation in general H01L21/304
• CPC Class Codes: H01L 2933/0091 Scattering means in or on the semiconductor body or semiconductor body package H01L33/22 takes precedence
• CPC Class Codes: H01L 33/007 comprising nitride compounds
• CPC Class Codes: H01L 33/0075 comprising nitride compounds
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers

Abstract

A method for producing a thin-film semiconductor body is provided. A growth substrate is provided. A semiconductor layer with funnel-shaped and/or inverted pyramid-shaped recesses is epitaxially grown onto the growth substrate. The recesses are filled with a semiconductor material in such a way that pyramid-shaped outcoupling structures arise. A semiconductor layer sequence with an active layer is applied on the outcoupled structures. The active layer is suitable for generating electromagnetic radiation. A carrier is applied onto the semiconductor layer sequence. At least the semiconductor layer with the funnel-shaped and/or inverted pyramid-shaped recesses is detached, such that the pyramid-shaped outcoupling structures are configured as projections on a radiation exit face of the thin-film semiconductor.

Claims

1. A thin-film semiconductor body, which is suitable for emitting electromagnetic radiation from a radiation exit face, comprising:

a semiconductor layer sequence with an active zone, which is configured to generate electromagnetic radiation, and

epitaxially formed pyramid-shaped outcoupling structures arranged on the radiation exit face.

2. The thin-film semiconductor body according to claim 1, wherein the semiconductor body has a thickness of 20 micrometers or less.

3. The thin-film semiconductor body according to claim 1, wherein faces of adjacent ones of the outcoupling structures are in mutual contact.

4. The thin-film semiconductor body according to claim 1, wherein each of the outcoupling structures comprises a projection with a base having a diameter of between 100 nm and 10 μ

m, inclusive.

5. The thin-film semiconductor body according to claim 1, wherein each of the outcoupling structures comprises a projection with a base with a diameter of between 0.5 nm and 1.5 μ

m, inclusive.

6. The thin-film semiconductor body according to claim 1, further comprising a refractive layer overlying the outcoupling structures, wherein the refractive layer adapts a refractive index between a semiconductor material of the thin-film semiconductor body and a surrounding medium.

7. The thin-film semiconductor body according to claim 6, wherein the refractive index of the refractive layer is between 1 and 2.3, inclusive.

8. The thin-film semiconductor body according to claim 1, in which the outcoupling structures are formed from a nitride compound semiconductor material.

9. The thin-film semiconductor body according to claim 1, wherein each of the outcoupling structures has a form of one of a right pyramid or a right truncated pyramid, and further has a base that is a regularly configured hexagon.