MULTI-AXIS SENSOR AND METHOD FOR MANUFACTURING THE SAME

• US 20160054352A1
• Filed: 01/07/2015
• Published: 02/25/2016
• Est. Priority Date: 08/25/2014
• Status: Abandoned Application

• Current Assignee: Samsung Electro-Mechanics Co., Ltd. (Samsung Group), Tohoku University National Universities Corporation
• Original Assignee: Samsung Electro-Mechanics Co., Ltd. (Samsung Group), Tohoku University National Universities Corporation
• Inventors: KANG, Pil Joong, LEE, Jung Won, KYOUNG, Je Hong, ESASHI, Masayoshi
• Application Number:
  US14/590,994
• Publication Number:
  US 20160054352A1
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: G01C 19/5719 using planar vibrating masses driven in a translation vibration along an axis
• CPC Class Codes: G01L 19/0092 Pressure sensor associated with other sensors, e.g. for measuring acceleration or temperature G01L9/025, G01L9/045, G01L9/065, G01L9/085, G01L9/105, G01L9/125, G01L19/02, G01L19/04 take precedence; measuring two or more variable G01D21/02; temperature sensors with pressure compensation G01K1/26
• CPC Class Codes: G01L 9/0045 Diaphragm associated with a buried cavity
• CPC Class Codes: G01L 9/0055 bonded on a diaphragm
• CPC Class Codes: G01P 15/123 by piezo-resistive elements, e.g. semiconductor strain gauges
• CPC Class Codes: G01P 15/18 in two or more dimensions
• CPC Class Codes: G01P 2015/0842 the mass being of clover leaf shape
• CPC Class Codes: G01R 33/0047 Housings or packaging of magnetic sensors packaging of semiconductor devices H01L23/00; Holders
• CPC Class Codes: G01R 33/0052 Manufacturing aspects; Manufacturing of single devices, i.e. of semiconductor magnetic sensor chips devices based on galvano-magnetic effect or the like H10N50/85
• CPC Class Codes: G01R 33/0206 Three-component magnetometers
• CPC Class Codes: G01R 33/12 Measuring magnetic properties of articles or specimens of solids or fluids involving magnetic resonance G01R33/20

Abstract

There are provided a multi-axis sensor and a method for manufacturing the same. The multi-axis sensor includes: a first sensor mounted on a board and detecting inertial force; and a second sensor mounted on the board and detecting a position and a motion, wherein the first sensor and the board have a seal formed therebetween so as to prevent permeation from the outside and are electrically connected to each other.

Claims

1. A multi-axis sensor comprising:

a first sensor mounted on a board and detecting inertial force; and

a second sensor mounted on the board and detecting a position and a motion,

wherein the first sensor and the board have a seal formed therebetween so as to prevent permeation from the outside and are electrically connected to each other.

2. The multi-axis sensor of claim 1, wherein the seal is formed by hermetic seal bonding, and

the first and second sensors are electrically connected to each other.

3. The multi-axis sensor of claim 2, wherein the first sensor has a seal formed thereon using a cap.

4. The multi-axis sensor of claim 3, wherein the first sensor and the cap are formed by hermetic seal bonding.

5. The multi-axis sensor of claim 3, wherein the board is formed using anyone of a low temperature co-fired ceramic (LTCC), a glass, an interposer, an application specific integrated circuit (ASIC), and a silicon so as to conduct electricity.

6. The multi-axis sensor of claim 3, wherein the first sensor is coupled to the board in a wafer level package (WLP) scheme, and

the second sensor is coupled to the board in a system-in-package (SIP) scheme.

7. The multi-axis sensor of claim 6, wherein the first sensor is formed of an inertial sensor including an acceleration sensor and an angular velocity sensor.

8. The multi-axis sensor of claim 7, wherein the first sensor includes at least one hermetic seal.

9. The multi-axis sensor of claim 8, wherein the second sensor includes a terrestrial magnetism sensor and a pressure sensor each formed on the board in the SIP scheme.

10. The multi-axis sensor of claim 9, wherein the first and second sensors have an ASIC formed integrally therewith at lower end portions thereof, the ASIC being formed so as to electrically connect the first and second sensors to each other.

11. The multi-axis sensor of claim 9, wherein the first or second sensor has an ASIC formed at a lower end portion thereof, the ASIC being electrically connected to the board so as to electrically connect the first and second sensors to each other.

12. The multi-axis sensor of claim 9, wherein the first and second sensors include an LTCC formed integrally therewith at lower end portions thereof, the LTCC being formed so as to electrically connect the first and second sensors to each other.

13. The multi-axis sensor of claim 12, wherein the LTCC is formed of a material by which anodic bonding is performed, and

the LTCC is formed so as to form a hermetic seal together with the first sensor.

14. A method for manufacturing a multi-axis sensor, comprising:

preparing a board;

forming a first sensor on the board in a WLP scheme;

forming a seal space at the time of forming the first sensor and the board; and

forming a second sensor on the board in an SIP scheme.

15. The method for manufacturing a multi-axis sensor of claim 14, wherein in the forming of the seal space at the time of forming the first sensor and the board, a hermetic seal space is formed as the seal space, and the first sensor and the board are electrically connected to each other.

16. The method for manufacturing a multi-axis sensor of claim 14, wherein in the preparing of the board, the board is prepared using anyone of an LTCC, a glass, an interposer, an ASIC, and a silicon.

17. The method for manufacturing a multi-axis sensor of claim 14, wherein in the forming of the first sensor on the board in the WLP scheme, the first sensor is formed in a range of 40 to 60% with respect to an area of the board.

18. The method for manufacturing a multi-axis sensor of claim 17, wherein in the forming of the first sensor on the board in the WLP scheme, the first sensor is formed of an inertial sensor including an acceleration sensor and an angular velocity sensor.

19. The method for manufacturing a multi-axis sensor of claim 14, wherein in the forming of the second sensor on the board in the SIP scheme, the second sensor is formed so as to include a terrestrial magnetism sensor and a pressure sensor.