ETCHING METHOD, ETCHING LIQUID AND ETCHING LIQUID KIT TO BE USED IN SAID METHOD, AND SEMICONDUCTOR SUBSTRATE PRODUCT MANUFACTURING METHOD
First Claim
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1. An etching method of a semiconductor substrate that includes a first layer containing germanium and a second layer containing at least one metal selected from nickel platinum, titanium, nickel, and cobalt, the method comprising:
- bringing an etching liquid which contains the following acid compounds into contact with the second layer and selectively removing the second layer.Acid compounds;
at least one compound selected from halogen acid and a salt thereof;
hexafluorosilicic acid and a salt thereof;
tetrafluoroboric acid and a salt thereof, and hexafluorophosphoric acid and a salt thereof
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Abstract
There is provided an etching method of a semiconductor substrate that includes a first layer containing germanium (Ge) and a second layer containing at least one metal element selected from nickel platinum (NiPt), titanium (Ti), nickel (Ni), and cobalt (Co), the method including: bringing an etching liquid which contains a specific acid compound into contact with the second layer and selectively removing the second layer.
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Citations
43 Claims
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1. An etching method of a semiconductor substrate that includes a first layer containing germanium and a second layer containing at least one metal selected from nickel platinum, titanium, nickel, and cobalt, the method comprising:
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bringing an etching liquid which contains the following acid compounds into contact with the second layer and selectively removing the second layer. Acid compounds;
at least one compound selected from halogen acid and a salt thereof;
hexafluorosilicic acid and a salt thereof;
tetrafluoroboric acid and a salt thereof, and hexafluorophosphoric acid and a salt thereof - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. An etching liquid of a semiconductor substrate that includes a first layer containing germanium and a second layer containing metals other than germanium,
wherein the etching liquid is for selectively removing the second layer, and the second layer is removed by bringing the etching liquid containing the following acid compounds and the following organic additive into contact with the second layer. Acid compounds: - at least one compound selected from halogen acid and a salt thereof;
hexafluorosilicic acid and a salt thereof;
tetrafluoroboric acid and a salt thereof, and hexafluorophosphoric acid and a salt thereofOrganic additive;
an additive formed of an organic compound which contains a nitrogen atom, a sulfur atom, a phosphorous atom, or an oxygen atom - View Dependent Claims (16, 17, 18, 19, 20, 21, 22, 23, 24, 25)
- at least one compound selected from halogen acid and a salt thereof;
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26. An etching liquid kit of a semiconductor substrate that includes a first layer containing germanium and a second layer containing metals other than germanium, which is for selectively removing the second layer with respect to a first layer, the etching liquid kit being formed by combining an oxidant, the following acid compounds, and the following organic additive, and comprising:
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a first liquid which contains at least the oxidant; and a second liquid which does not contain the oxidant. Acid compounds;
at least one compound selected from halogen acid and a salt thereof;
hexafluorosilicic acid and a salt thereof;
tetrafluoroboric acid and a salt thereof, and hexafluorophosphoric acid and a salt thereofOrganic additive;
an additive formed of an organic compound which contains a nitrogen atom, a sulfur atom, a phosphorous atom, or an oxygen atom
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27. A semiconductor substrate product manufacturing method that includes a first layer containing germanium, comprising:
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a step of forming at least the first layer and a second layer containing at least one metal selected from nickel platinum, titanium, nickel, and cobalt on the semiconductor substrate; a step of forming a third layer containing components of both layers between the first layer and the second layer by heating the semiconductor substrate; a step of preparing an etching liquid containing the following acid compounds; and a step of bringing the etching liquid into contact with the second layer and selectively removing the second layer with respect to the first layer and the third layer. Acid compounds;
at least one compound selected from halogen acid and a salt thereof;
hexafluorosilicic acid and a salt thereof;
tetrafluoroboric acid and a salt thereof, and hexafluorophosphoric acid and a salt thereof
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- 28. An etching liquid which is used for a semiconductor process, containing fluorine ions and an acid assistant.
- 40. An etching method, wherein an etching liquid containing fluorine ions and an acid assistant is used for a semiconductor substrate.
Specification