ORGANIC ELECTRONIC DEVICE AND METHOD OF MANUFACTURE

• US 20160056380A1
• Filed: 09/03/2015
• Published: 02/25/2016
• Est. Priority Date: 04/22/2009
• Status: Abandoned Application

• Current Assignee: Badr Omrane, Bozena Kaminska, Clinton K. Landrock, Yindar Chuo
• Original Assignee: Badr Omrane, Bozena Kaminska, Clinton K. Landrock, Yindar Chuo
• Inventors: OMRANE, Badr, LANDROCK, Clinton K., CHUO, Yindar, KAMINSKA, Bozena
• Application Number:
  US14/845,176
• Publication Number:
  US 20160056380A1
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: H01G 4/005 Electrodes
• CPC Class Codes: H01G 4/008 Selection of materials
• CPC Class Codes: H01G 4/14 Organic dielectrics
• CPC Class Codes: H01G 4/18 of synthetic material, e.g. derivatives of cellulose H01G4/16 takes precedence
• CPC Class Codes: H01G 9/15 Solid electrolytic capacitors H01G11/00 takes precedence
• CPC Class Codes: H01M 10/0565 Polymeric materials, e.g. gel-type or solid-type
• CPC Class Codes: H01M 2300/0082 Organic polymers
• CPC Class Codes: H01M 2300/0091 in the form of mixtures
• CPC Class Codes: H01M 6/181 with polymeric electrolytes
• CPC Class Codes: H10K 2102/00 Constructional details relating to the organic devices covered by this subclass
• CPC Class Codes: H10K 2102/351 Thickness
• CPC Class Codes: H10K 30/81 Electrodes
• CPC Class Codes: H10K 50/11 characterised by the electroluminescent [EL] layers
• CPC Class Codes: H10K 50/15 Hole transporting layers
• CPC Class Codes: H10K 50/82 Cathodes
• CPC Class Codes: H10K 71/00 Manufacture or treatment specially adapted for the organic devices covered by this subclass
• CPC Class Codes: H10K 71/40 Thermal treatment, e.g. annealing in the presence of a solvent vapour
• CPC Class Codes: H10K 71/60 Forming conductive regions or layers, e.g. electrodes
• CPC Class Codes: Y02E 10/549 Organic PV cells
• CPC Class Codes: Y02E 60/10 Energy storage using batteries
• CPC Class Codes: Y02P 70/50 : Manufacturing or production processes characterised by the final manufactured product

Abstract

An organic electronic device (e.g. OLED, OPV, OES, OTFT) is disclosed. The organic electronic device includes a carrier substrate, a first electrode layer disposed on the carrier substrate, an organic active electronic region disposed on the first electrode layer, and an indium second electrode layer disposed and formed on the organic active electronic region by applying heat on an indium solid at a temperature between the melting temperature of indium and a threshold operating temperature of the organic layers to melt the indium solid on the organic active electronic region. The organic active electronic region includes one or more organic layers. A method of manufacturing an organic electronic device is also disclosed.

Claims

1. An organic electronic device, comprising:

a carrier substrate;

a first electrode layer disposed on the carrier substrate;

an organic active electronic region disposed on said first electrode layer, said organic active electronic region comprising one or more organic layers; and

an indium second electrode layer disposed on said organic active electronic region by applying heat on an indium solid at a temperature between a melting temperature of indium and a threshold operating temperature of at least one of said organic layers to substantially melt said indium solid onto the organic active electronic region, thereby forming said indium second electrode layer.

2. The organic electronic device according to claim 1, wherein said indium second electrode layer has a thickness greater than 1 micrometer (μ

m).

3. The organic electronic device according to claim 1, wherein said first electrode layer has a thickness between 80 nanometers (nm) and 200 nanometers (nm).

4. The organic electronic device according to claim 1 wherein said organic electronic device comprises at least one of:

an organic photovoltaic device, wherein said organic active electronic region comprises a photoactive layer disposed on said first electrode layer;

an organic light emitting diode device, wherein said organic active electronic region comprises an emissive layer disposed on said first electrode layer;

an organic thin film transistor device, wherein said organic active electronic region comprises an organic semiconductor layer disposed on said first electrode layer; and

an organic energy storage device, wherein said organic active electronic region comprises an energy storing polymer layer disposed on said first electrode layer.

5. The organic electronic device according to claim 1, wherein said organic electronic device comprises an organic photovoltaic device, and wherein said organic active electronic region comprises a photoactive layer, and a hole transport layer disposed between said first electrode layer and said photoactive layer.

6. The organic electronic device according to claim 1, wherein said organic electronic device comprises an organic light emitting diode device, and wherein said organic electronic region comprises an emissive layer and a hole transport layer disposed between said first electrode layer and said emissive layer.

7. The organic electronic device according to claim 1, wherein said organic electronic device comprises an organic energy storage device, and wherein said organic energy storage device comprises an ionic polymer layer disposed on said first electrode layer.

8. A method of manufacturing an organic electronic device, comprising:

forming an first electrode layer on a carrier substrate;

forming an organic active electronic region on said first electrode layer, said organic active electronic region comprising one or more organic layers; and

forming a continuous oxidative layer comprising indium metal on an substantially covering said organic active electronic region; and

applying heat on said continuous oxidative layer at a temperature between the melting temperature of the continuous oxidative layer and a threshold operating temperature of at least one of said organic layers to substantially melt the continuous oxidative layer directly onto the organic active electronic region, thereby oxidizing said continuous oxidative layer in contact with said organic active electronic region and forming a second electrode layer comprising indium metal directly on said organic active electronic region.

9. The method according to claim 8, wherein said indium second electrode layer comprising indium metal has a thickness greater than 1 micrometer (μ

m).

10. The method according to claim 8, wherein said first electrode layer has a thickness between 80 nanometers (nm) and 200 nanometers (nm).

11. The method according to claim 8, wherein said organic active electronic region comprises a photo active layer, the step of forming an organic active electronic region on said first electrode layer comprising:

forming said photo active layer on said first electrode layer.

12. The method according to claim 8, wherein said organic active electronic region comprises a photo active layer and a hole transport layer, the step of forming an organic active electronic region on said first electrode layer comprising:

forming said hole transport layer on said first electrode layer; and

forming said photo active layer on said hole transport layer.

13. The method according to claim 8, wherein said organic active electronic region comprises an emissive layer, the step of forming an organic active electronic region on said first electrode layer comprising:

forming said emissive layer on said first electrode layer.

14. The method according to claim 13, wherein said organic active electronic region comprises an emissive layer and a hole transport layer, the step of forming an organic active electronic region on said first electrode layer comprising:

forming said hole transport layer on said first electrode layer; and

forming said emissive layer on said hole transport layer.

15. The method according to claim 8, wherein said organic active electronic region comprises an ionic polymer energy storage layer, the step of forming an organic active electronic region on said first electrode layer comprising:

forming said ionic polymer energy storage layer on said first electrode layer.

16. The method according to claim 11, wherein said photo active layer is formed on said first electrode layer by at least one of:

spin coating;

evaporating;

printing;

brush painting;

molding; and

spraying, an organic photoactive material onto said first electrode layer.

17. The method according to claim 12, wherein said hole transport layer is formed on said first electrode layer by at least one of:

spin coating;

evaporating;

printing;

brush painting;

molding; and

spraying, an organic hole transport material onto said first electrode layer.

18. The method according to claim 12, wherein said photoactive layer is formed on said hole transport layer by at least one of:

spin coating;

evaporating;

printing;

brush painting;

molding;

printing; and

spraying, an organic photoactive material onto said hole transport layer.

19. The method according to claim 8, wherein said continuous oxidative layer comprises a substantially continuous shape.

20. The method according to claim 8, wherein the step of applying heat on said continuous oxidative layer at a temperature between the melting temperature of the continuous oxidative layer and a threshold operating temperature of at least one of said organic layers further comprises sealing the organic active electronic region with the second electrode layer.