MEMS DEVICE AND METHOD FOR MANUFACTURING A MEMS DEVICE
First Claim
1. A method for producing a MEMS device comprising:
- forming a semiconductor layer stack, the semiconductor layer stack comprising at least a first monocrystalline semiconductor layer, a second monocrystalline semiconductor layer and a third monocrystalline semiconductor layer, the second monocrystalline semiconductor layer formed between the first and third monocrystalline semiconductor layers, wherein a semiconductor material of the second monocrystalline semiconductor layer is different from semiconductor materials of the first and third monocrystalline semiconductor layers; and
after forming the semiconductor layer stack, concurrently etching at least a portion of each of the first and third monocrystalline semiconductor layers.
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Abstract
A method for producing a MEMS device comprises forming a semiconductor layer stack, the semiconductor layer stack comprising at least a first monocrystalline semiconductor layer, a second monocrystalline semiconductor layer and a third monocrystalline semiconductor layer, the second monocrystalline semiconductor layer formed between the first and third monocrystalline semiconductor layers. A semiconductor material of the second monocrystalline semiconductor layer is different from semiconductor materials of the first and third monocrystalline semiconductor layers. After forming the semiconductor layer stack, at least a portion of each of the first and third monocrystalline semiconductor layers is concurrently etched.
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Citations
26 Claims
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1. A method for producing a MEMS device comprising:
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forming a semiconductor layer stack, the semiconductor layer stack comprising at least a first monocrystalline semiconductor layer, a second monocrystalline semiconductor layer and a third monocrystalline semiconductor layer, the second monocrystalline semiconductor layer formed between the first and third monocrystalline semiconductor layers, wherein a semiconductor material of the second monocrystalline semiconductor layer is different from semiconductor materials of the first and third monocrystalline semiconductor layers; and after forming the semiconductor layer stack, concurrently etching at least a portion of each of the first and third monocrystalline semiconductor layers. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22)
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23. A MEMS device comprising:
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a movable MEMS element comprising a monocrystalline semiconductor material; a non-movable semiconductor layer stack lateral to the movable MEMS element, the semiconductor layer stack comprising at least a first monocrystalline semiconductor layer, a second monocrystalline semiconductor layer and a third monocrystalline semiconductor layer, the second monocrystalline semiconductor layer formed between the first and third monocrystalline semiconductor layers; and a gap structure surrounding the movable MEMS element and separating the movable MEMS element in lateral directions from the layer stack. - View Dependent Claims (24)
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25. A method of producing vertically stacked MEMS devices, the method comprising:
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forming a first plurality of monocrystalline semiconductor layers of a semiconductor material such that a first monocrystalline semiconductor layer is formed between a first pair of monocrystalline semiconductor layers; etching at least a portion of each layer of the first pair of monocrystalline semiconductor layers; forming a second plurality of monocrystalline semiconductor layers of a semiconductor material such that a second monocrystalline semiconductor layer is formed between a second pair of monocrystalline semiconductor layers; etching at least a portion of each layer of the second pair of monocrystalline semiconductor layers. - View Dependent Claims (26)
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Specification