PRESSURE SENSOR INCLUDING DEFORMABLE PRESSURE VESSEL(S)
First Claim
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1. A pressure sensor comprising:
- a semiconductor substrate that includes a first cavity;
a pressure vessel made from a dielectric lining that is formed in a trench that has an aspect ratio greater than four, the pressure vessel having a cross section that defines a void, the pressure vessel having at least one curved portion that is configured to structurally deform based on a pressure difference between a cavity pressure in the first cavity and a vessel pressure in the pressure vessel, at least a first portion of the pressure vessel suspended in the first cavity; and
a first transducer coupled to the first portion of the pressure vessel, the first transducer having an attribute that changes with structural deformation of the pressure vessel.
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Abstract
Techniques are described herein that perform pressure sensing using pressure sensor(s) that include deformable pressure vessel(s). A pressure vessel is an object that has a cross section that defines a void. A deformable pressure vessel is a pressure vessel that has at least one curved portion that is configured to structurally deform (e.g., bend, shear, elongate, etc.) based on a pressure difference between a cavity pressure in a cavity in which at least a portion of the pressure vessel is suspended and a vessel pressure in the pressure vessel.
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Citations
27 Claims
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1. A pressure sensor comprising:
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a semiconductor substrate that includes a first cavity; a pressure vessel made from a dielectric lining that is formed in a trench that has an aspect ratio greater than four, the pressure vessel having a cross section that defines a void, the pressure vessel having at least one curved portion that is configured to structurally deform based on a pressure difference between a cavity pressure in the first cavity and a vessel pressure in the pressure vessel, at least a first portion of the pressure vessel suspended in the first cavity; and a first transducer coupled to the first portion of the pressure vessel, the first transducer having an attribute that changes with structural deformation of the pressure vessel. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25)
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26. A method comprising:
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providing a semiconductor substrate that includes a cavity; fabricating a pressure vessel from a dielectric lining that is formed in a trench that has an aspect ratio greater than four, the pressure vessel having a cross section that defines a void, the pressure vessel having at least one curved portion that is configured to structurally deform based on a pressure difference between a cavity pressure in the cavity and a vessel pressure in the pressure vessel, at least a portion of the pressure vessel suspended in the cavity; and fabricating a transducer coupled to the portion of the pressure vessel, the transducer having an attribute that changes with structural deformation of the pressure vessel.
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27. A method comprising:
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receiving a cavity pressure in a cavity that is included in a semiconductor substrate of a pressure sensor; receiving a vessel pressure in a pressure vessel of the pressure sensor that is made from a dielectric lining that is formed in a trench that has an aspect ratio greater than four, the pressure vessel having a cross section that defines a void and having at least one curved portion that is configured to structurally deform based on a pressure difference between the cavity pressure and the vessel pressure, at least a portion of the pressure vessel being suspended in the cavity; and measuring an attribute of a transducer that is coupled to the portion of the pressure vessel, the attribute changing with structural deformation of the pressure vessel.
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Specification