Semiconductor Device and a Method for Manufacturing a Semiconductor Device
First Claim
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1. A semiconductor device comprising:
- a semiconductor substrate structure comprising a cell region and an edge termination region surrounding the cell region;
a plurality of needle-shaped cell trenches within the cell region reaching from a surface of the semiconductor substrate structure into the semiconductor substrate structure; and
an edge termination trench within the edge termination region surrounding the cell region at the surface of the semiconductor substrate structure.
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Abstract
A semiconductor device comprises a semiconductor substrate structure comprising a cell region and an edge termination region surrounding the cell region. Further it comprises a plurality of needle-shaped cell trenches within the cell region reaching from a surface of the semiconductor substrate structure into the substrate structure and an edge termination trench within the edge termination region surrounding the cell region at the surface of the semiconductor substrate structure.
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Citations
20 Claims
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1. A semiconductor device comprising:
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a semiconductor substrate structure comprising a cell region and an edge termination region surrounding the cell region; a plurality of needle-shaped cell trenches within the cell region reaching from a surface of the semiconductor substrate structure into the semiconductor substrate structure; and an edge termination trench within the edge termination region surrounding the cell region at the surface of the semiconductor substrate structure. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. Semiconductor device comprising:
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a semiconductor substrate structure comprising a cell region and an edge termination region surrounding the cell region; and a row of needle-shaped trenches within the edge termination region surrounding the cell region at the surface of the semiconductor substrate structure, wherein a plurality of field plate structures extend into the needle-shaped trenches of the row of needle-shaped trenches, wherein the field plate structures are insulated from the semiconductor substrate structure within the trenches by an insulating material structure extending throughout the row of needle-shaped trenches. - View Dependent Claims (16, 17, 18)
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19. A semiconductor device comprising:
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a semiconductor substrate structure comprising a cell region and an edge termination region surrounding the cell region; at least one cell trench within the cell region reaching from a surface of the semiconductor substrate structure into the semiconductor substrate structure; at least one edge termination trench within the edge termination region surrounding the cell region at the surface of the semiconductor substrate structure; and an insulation layer within the trenches, wherein the insulation layer within the at least one cell trench is thinner than the insulation layer within the at least one edge termination trench. - View Dependent Claims (20)
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Specification