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NITRIDE BASED SEMICONDUCTOR DEVICE

  • US 20160064488A1
  • Filed: 11/06/2015
  • Published: 03/03/2016
  • Est. Priority Date: 05/09/2013
  • Status: Abandoned Application
First Claim
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1. A nitride based semiconductor device comprising:

  • a substrate;

    a first buffer layer disposed on the substrate;

    a second buffer layer disposed on the first buffer layer;

    a third buffer layer disposed on the second buffer layer, the third buffer layer comprising an AlGaN-based nitride semiconductor;

    a fourth buffer layer disposed on the third buffer layer, the fourth buffer layer comprising a GaN-based nitride semiconductor;

    a barrier layer disposed on the fourth buffer layer, the barrier layer comprising an AlGaN-based nitride semiconductor; and

    a source electrode and a drain electrode, each disposed on the barrier layer, and a gate electrode disposed between the source electrode and the drain electrode, whereinthe third buffer layer is subjected to lattice relaxation.

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