NITRIDE BASED SEMICONDUCTOR DEVICE
First Claim
1. A nitride based semiconductor device comprising:
- a substrate;
a first buffer layer disposed on the substrate;
a second buffer layer disposed on the first buffer layer;
a third buffer layer disposed on the second buffer layer, the third buffer layer comprising an AlGaN-based nitride semiconductor;
a fourth buffer layer disposed on the third buffer layer, the fourth buffer layer comprising a GaN-based nitride semiconductor;
a barrier layer disposed on the fourth buffer layer, the barrier layer comprising an AlGaN-based nitride semiconductor; and
a source electrode and a drain electrode, each disposed on the barrier layer, and a gate electrode disposed between the source electrode and the drain electrode, whereinthe third buffer layer is subjected to lattice relaxation.
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Abstract
A nitride based semiconductor device includes: a substrate; a first buffer layer disposed on the substrate; a second buffer layer disposed on the first buffer layer; a third buffer layer disposed on the second buffer layer, the third buffer layer including an AlGaN-based nitride semiconductor; a fourth buffer layer disposed on the third buffer layer, the fourth buffer layer including a GaN-based nitride semiconductor; a barrier layer disposed on the fourth buffer layer, the barrier layer including an AlGaN-based nitride semiconductor; and a source electrode and a drain electrode, each disposed on the barrier layer, and a gate electrode disposed between the source electrode and the drain electrode, wherein the third buffer layer is subjected to lattice relaxation. There can be provided a nitride based semiconductor device capable of reducing a leakage current and improving breakdown capability.
41 Citations
16 Claims
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1. A nitride based semiconductor device comprising:
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a substrate; a first buffer layer disposed on the substrate; a second buffer layer disposed on the first buffer layer; a third buffer layer disposed on the second buffer layer, the third buffer layer comprising an AlGaN-based nitride semiconductor; a fourth buffer layer disposed on the third buffer layer, the fourth buffer layer comprising a GaN-based nitride semiconductor; a barrier layer disposed on the fourth buffer layer, the barrier layer comprising an AlGaN-based nitride semiconductor; and a source electrode and a drain electrode, each disposed on the barrier layer, and a gate electrode disposed between the source electrode and the drain electrode, wherein the third buffer layer is subjected to lattice relaxation. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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Specification