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SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND OPTICAL COUPLING DEVICE

  • US 20160064599A1
  • Filed: 08/05/2015
  • Published: 03/03/2016
  • Est. Priority Date: 09/02/2014
  • Status: Active Grant
First Claim
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1. A semiconductor light-emitting element, comprising:

  • a first semiconductor layer of a first conductivity type;

    a second semiconductor of a second conductivity type on the first semiconductor layer; and

    a light emitting layer between the first and second semiconductor layers, the light emitting layer including a well layer formed of Inx(Ga1-yAly)1-xAs (0<

    x≦

    0.2, 0<

    y<

    1), and two barrier layers formed of Ga1-zAlzAs (0<

    z<

    1), wherein the well layer is between the two barrier layers.

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