OPPOSITE POLARITY BORDERLESS REPLACEMENT METAL CONTACT SCHEME
First Claim
1. A method of forming a set of contacts in a semiconductor structure comprising:
- forming a set of masks over a portion of the semiconductor structure, wherein each mask in the set of masks covers at least one source/drain (s/d) contact location;
removing a oxide layer from remainder portions of the semiconductor structure that are not covered by the set of masks;
forming an opposite-mask fill layer in the remainder portions of the semiconductor structure;
removing the oxide layer from the portion of the semiconductor structure previously covered by the set of masks; and
depositing a metal contact layer that forms a contact to the at least one s/d contact location in the portion of the semiconductor structure previously covered by the set of masks.
5 Assignments
0 Petitions
Accused Products
Abstract
An improved semiconductor structure and methods of fabrication that provide improved transistor contacts in a semiconductor structure are provided. A set of masks is formed over a portion of the semiconductor structure. Each mask in this set of masks covers at least one source/drain (s/d) contact location. An oxide layer is removed from remainder portions of the semiconductor structure that are not covered by the set of masks. Then an opposite-mask fill layer is formed in the remainder portions from which the oxide layer was removed. The oxide layer is then removed from the remainder of the semiconductor structure, i.e., the portion previously covered by the set of masks and contacts are formed to the at least s/d contact location in the recesses formed by the removal of the remainder of the oxide layer.
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Citations
20 Claims
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1. A method of forming a set of contacts in a semiconductor structure comprising:
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forming a set of masks over a portion of the semiconductor structure, wherein each mask in the set of masks covers at least one source/drain (s/d) contact location; removing a oxide layer from remainder portions of the semiconductor structure that are not covered by the set of masks; forming an opposite-mask fill layer in the remainder portions of the semiconductor structure; removing the oxide layer from the portion of the semiconductor structure previously covered by the set of masks; and depositing a metal contact layer that forms a contact to the at least one s/d contact location in the portion of the semiconductor structure previously covered by the set of masks. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method of forming a semiconductor device comprising:
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forming a set of source-drain (s/d) regions and a set of replacement metal gates on a substrate; forming a set of gate capping regions over the set of replacement metal gates; forming an oxide layer over the semiconductor device; forming a set of masks over a portion of the semiconductor device, wherein each mask in the set of masks covers at least one source/drain (s/d) contact location; removing the oxide layer from remainder portions of the semiconductor device that are not covered by the set of masks; forming a silicon oxycarbide dielectric layer in the remainder portions of the semiconductor device; removing the oxide layer from the portion of the semiconductor device previously covered by the set of masks; and depositing a metal contact layer that forms a contact to the at least one s/d contact location in the portion of the semiconductor device previously covered by the set of masks. - View Dependent Claims (10, 11, 12, 13, 14)
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15. A semiconductor device, formed according to a method, comprising:
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forming a set of source-drain (s/d) regions and a set of replacement metal gates on a substrate; forming a set of gate capping regions over the set of replacement metal gates; forming an oxide layer over the semiconductor device; forming a set of masks over a portion of the semiconductor device, wherein each mask in the set of masks covers at least one source/drain (s/d) contact location; removing the oxide layer from remainder portions of the semiconductor device that are not covered by the set of masks; forming a silicon oxycarbide dielectric layer in the remainder portions of the semiconductor device; removing the oxide layer from the portion of the semiconductor device previously covered by the set of masks; and depositing a metal contact layer that forms a contact to the at least one s/d contact location in the portion of the semiconductor device previously covered by the set of masks. - View Dependent Claims (16, 17, 18, 19, 20)
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Specification