TRENCH SCHOTTKY RECTIFIER DEVICE AND METHOD FOR MANUFACTURING THE SAME
First Claim
1. A method for fabricating a trench Schottky rectifier device, comprising steps of:
- providing a substrate having a first conductivity type;
forming a mask oxide layer on the substrate and forming a plurality of openings in the mask oxide layer;
forming a first plurality of trenches and a second plurality of trenches in the substrate according the mask oxide layer;
forming a plurality of doped regions having a second conductivity type in the substrate under the first plurality of trenches and the second plurality of trenches;
forming an insulating layer on sidewalls of the first plurality of trenches and the second plurality of trenches;
filling the first plurality of trenches with a first plurality of conductive structures and filling the second plurality of trenches with a second plurality of conductive structures;
forming a first oxide layer covering on a first portion of the mask oxide layer and the first plurality of conductive structures;
removing a second portion of the mask oxide layer to expose the second plurality of conductive structures and a first portion of the substrate; and
forming an electrode overlying the first oxide layer, the second plurality of conductive structures and the first portion of the substrate, wherein a Schottky contact forms between the electrode and the first portion of the substrate.
1 Assignment
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Accused Products
Abstract
A method for fabricating a trench Schottky rectifier device is provided. At first, a plurality of trenched are formed in a substrate of a first conductivity type. An insulating layer is formed on sidewalls of the trenches. Then, an ion implantation procedure is performed through the trenches to form a plurality of doped regions of a second conductivity type under the trenches. Subsequently, the trenches are filled with conductive structure such as poly-silicon structure or tungsten structure. At last, an electrode overlying the conductive structure and the substrate is formed. Thus, a Schottky contact appears between the electrode and the substrate. Each doped region and the substrate will form a PN junction to pinch off current flowing toward the Schottky contact to suppress the current leakage in a reverse bias mode.
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Citations
7 Claims
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1. A method for fabricating a trench Schottky rectifier device, comprising steps of:
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providing a substrate having a first conductivity type; forming a mask oxide layer on the substrate and forming a plurality of openings in the mask oxide layer; forming a first plurality of trenches and a second plurality of trenches in the substrate according the mask oxide layer; forming a plurality of doped regions having a second conductivity type in the substrate under the first plurality of trenches and the second plurality of trenches; forming an insulating layer on sidewalls of the first plurality of trenches and the second plurality of trenches; filling the first plurality of trenches with a first plurality of conductive structures and filling the second plurality of trenches with a second plurality of conductive structures; forming a first oxide layer covering on a first portion of the mask oxide layer and the first plurality of conductive structures; removing a second portion of the mask oxide layer to expose the second plurality of conductive structures and a first portion of the substrate; and forming an electrode overlying the first oxide layer, the second plurality of conductive structures and the first portion of the substrate, wherein a Schottky contact forms between the electrode and the first portion of the substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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Specification