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TRENCH SCHOTTKY RECTIFIER DEVICE AND METHOD FOR MANUFACTURING THE SAME

  • US 20160071950A1
  • Filed: 11/13/2015
  • Published: 03/10/2016
  • Est. Priority Date: 10/12/2009
  • Status: Active Grant
First Claim
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1. A method for fabricating a trench Schottky rectifier device, comprising steps of:

  • providing a substrate having a first conductivity type;

    forming a mask oxide layer on the substrate and forming a plurality of openings in the mask oxide layer;

    forming a first plurality of trenches and a second plurality of trenches in the substrate according the mask oxide layer;

    forming a plurality of doped regions having a second conductivity type in the substrate under the first plurality of trenches and the second plurality of trenches;

    forming an insulating layer on sidewalls of the first plurality of trenches and the second plurality of trenches;

    filling the first plurality of trenches with a first plurality of conductive structures and filling the second plurality of trenches with a second plurality of conductive structures;

    forming a first oxide layer covering on a first portion of the mask oxide layer and the first plurality of conductive structures;

    removing a second portion of the mask oxide layer to expose the second plurality of conductive structures and a first portion of the substrate; and

    forming an electrode overlying the first oxide layer, the second plurality of conductive structures and the first portion of the substrate, wherein a Schottky contact forms between the electrode and the first portion of the substrate.

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