SEMICONDUCTOR DEVICE
First Claim
1. A semiconductor device comprising:
- a first semiconductor region of a second conductivity type;
a second semiconductor region of a first conductivity type provided over the first semiconductor region;
a third semiconductor region of the second conductivity type selectively provided on the second semiconductor region;
a fourth semiconductor region of the first conductivity type selectively provided on the third semiconductor region;
a fifth semiconductor region of the second conductivity type selectively provided on the third semiconductor region;
a gate electrode disposed adjacent to the third semiconductor region with a first insulating film therebetween;
a first electrode extending inwardly of the second semiconductor region with a second insulating film therebetween, a portion of the second semiconductor region positioned between the gate electrode and the first electrode;
a second electrode in contact with the fifth semiconductor region and the fourth semiconductor region; and
a sixth semiconductor region of the second conductivity type extending inwardly of the second semiconductor region in at least apart of an area where the third semiconductor region is not provided, and not in contact with the second electrode.
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Accused Products
Abstract
A semiconductor device includes a first semiconductor region of a second conductivity type, and a second semiconductor region of a first conductivity type. A third semiconductor region of a first conductivity type is selectively provided on the second semiconductor region. A fourth semiconductor region of the first conductivity type and a fifth semiconductor region of the second conductivity type are selectively provided on the third semiconductor region. A first electrode is provided on a second insulating film within the second semiconductor region. A second electrode is in contact with the fifth semiconductor region and the third semiconductor region. The sixth semiconductor region is provided on the second semiconductor region at least in a portion thereon other than the area where the third semiconductor region is provided. The sixth semiconductor region is not in contact with the second electrode.
13 Citations
20 Claims
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1. A semiconductor device comprising:
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a first semiconductor region of a second conductivity type; a second semiconductor region of a first conductivity type provided over the first semiconductor region; a third semiconductor region of the second conductivity type selectively provided on the second semiconductor region; a fourth semiconductor region of the first conductivity type selectively provided on the third semiconductor region; a fifth semiconductor region of the second conductivity type selectively provided on the third semiconductor region; a gate electrode disposed adjacent to the third semiconductor region with a first insulating film therebetween; a first electrode extending inwardly of the second semiconductor region with a second insulating film therebetween, a portion of the second semiconductor region positioned between the gate electrode and the first electrode; a second electrode in contact with the fifth semiconductor region and the fourth semiconductor region; and a sixth semiconductor region of the second conductivity type extending inwardly of the second semiconductor region in at least apart of an area where the third semiconductor region is not provided, and not in contact with the second electrode. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A semiconductor device, comprising:
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a first doped semiconductor region of a first dopant type; a plurality of second doped semiconductor regions of a second dopant type extending in a first direction on the first doped semiconductor layer; a plurality of third doped semiconductor layers of the first dopant type located on the second doped semiconductor layer; a plurality of fourth doped semiconductor layers of the second dopant type located on the second semiconductor layer between the third doped semiconductor regions; a first electrode extending in the first direction and also inwardly of the first doped semiconductor region and between two second doped semiconductor regions; a second electrode extending in the first direction and also inwardly of the first doped semiconductor region adjacent to the first of the second doped semiconductor regions on a side thereof opposed to the location of the first electrode a third electrode extending in the first direction and inwardly of the first doped semiconductor region adjacent to the second of the second doped semiconductor regions on a side thereof opposed to the location of the first electrode, wherein one of the first electrode, or the second and third electrodes, terminate inwardly of the first semiconductor region below the location of the second semiconductor region thereon, and a first insulating layer extends thereover and along a portion of the side of the second doped semiconductor layer. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16, 17)
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18. A semiconductor device, comprising:
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a drift layer doped to a first conductivity type; a plurality of pairs of base regions doped to a second conductivity type disposed on the drift region, and a first electrode extending inwardly of the drift layer at a location between at least a pair of base regions of the plurality of pairs of base regions; a pair of second electrodes extending inwardly of the drift layer, one electrode of the second electrode pair extending along the side of each base layer of the pairs of base layers on the side thereof opposed to the location of the first electrode; and a semiconductor layer doped to a second conductivity type opposite to the first conductivity type located on the drift layer in and extending between adjacent pairs of base layers, wherein the distance between the electrodes of the second pair of electrodes is less than the expanse of the semiconductor layer doped to a second conductivity type in the direction extending between adjacent pairs of base layers. - View Dependent Claims (19, 20)
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Specification