MAGNETORESISTIVE ELEMENT AND MANUFACTURING METHOD THEREOF

• US 20160072046A1
• Filed: 02/20/2015
• Published: 03/10/2016
• Est. Priority Date: 09/05/2014
• Status: Active Grant

• Current Assignee: Kioxia Corporation
• Original Assignee: Daisuke Watanabe, Kazuya Sawada, Koji Ueda, Makoto Nagamine, Toshihiko Nagase
• Inventors: NAGASE, Toshihiko, WATANABE, Daisuke, EEH, Youngmin, UEDA, Koji, SAWADA, Kazuya, NAGAMINE, Makoto
• Granted Patent: US 9,620,561 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: H01L 21/67709 using magnetic elements
• CPC Class Codes: H01L 29/82 controllable by variation of the magnetic field applied to the device
• CPC Class Codes: H10B 61/00 Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
• CPC Class Codes: H10N 50/01 Manufacture or treatment
• CPC Class Codes: H10N 50/10 Magnetoresistive devices

Abstract

According to one embodiment, a magnetoresistive element is disclosed. The magnetoresistive element includes an underlayer containing aluminum (Al), nitrogen (N) and X. The X is an element other than Al and N. A first magnetic layer is provided on the underlayer. A nonmagnetic layer is provided on the first magnetic layer. A second magnetic layer is provided on the nonmagnetic layer.

Claims

1. A magnetoresistive element comprising:

an underlayer containing aluminum (Al), nitrogen (N) and X, wherein the X is an element other than Al and N;

a first magnetic layer provided on the underlayer;

a nonmagnetic layer provided on the first magnetic layer; and

a second magnetic layer provided on the nonmagnetic layer.

2. The magnetoresistive element according to claim 1, wherein the X contains titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), chromium (Cr), molybdenum (Mo) or tungsten (W).

3. The magnetoresistive element according to claim 1, wherein the underlayer does not contain a metallic state of Al.

4. The magnetoresistive element according to claim 1, wherein the nonmagnetic layer does not contain a metallic state of Al.

5. The magnetoresistive element according to claim 1, wherein the underlayer further contains a compound of Al and the X.

6. The magnetoresistive element according to claim 1, wherein the underlayer further contains a compound of N and the X.

7. The magnetoresistive element according to claim 1, further comprising a buffer layer, and wherein the underlayer is provided on the buffer layer.

8. The magnetoresistive element according to claim 7, wherein the buffer layer contains at least one of Ta, Ti, W, Zr, Hf and Cr.

9. The magnetoresistive element according to claim 1, wherein concentration of the X in the underlayer is equal to or greater than 10 at. %.

10. The magnetoresistive element according to claim 1, wherein the underlayer comprises a first region containing a compound of Al and N and second regions containing a compound of the X and N.

11. The magnetoresistive element according to claim 10, wherein part of the second regions is surrounded by the first region.

12. The magnetoresistive element according to claim 11, wherein the second regions have pillar shapes.

13. The magnetoresistive element according to claim 12, wherein side surfaces of the second regions are surrounded by the first region.

14. A method of manufacturing a magnetoresistive element, comprising:

forming an underlayer containing aluminum (Al), nitrogen (N) and X, wherein the X is an element other than Al and N;

forming a first magnetic layer on the underlayer;

forming a nonmagnetic layer on the first magnetic layer; and

forming a second magnetic layer on the nonmagnetic layer.

15. The method according to claim 14, wherein the forming the underlayer is carried out in an atmosphere containing nitrogen, and is carried out by using a sputtering process with a target containing Al and the X.

16. The method according to claim 15, wherein the forming the underlayer further comprises subjecting the underlayer to heat treatment after the sputtering process.

17. The method according to claim 14, wherein the X contains titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), chromium (Cr), molybdenum (Mo) or tungsten (W).

18. The method according to claim 14, further comprising forming a buffer layer, and wherein the underlayer is formed on the buffer layer.

19. The method according to claim 15, wherein the buffer layer contains at least one of Ta, Ti, W, Zr, Hf and Cr.