CIRCUIT BOARD AND METHOD FOR FABRICATING THE SAME

• US 20160073497A1
• Filed: 11/17/2015
• Published: 03/10/2016
• Est. Priority Date: 05/23/2013
• Status: Active Grant

• Current Assignee: BYD Company Limited
• Original Assignee: BYD Company Limited
• Inventors: XU, Qiang, LIN, Xinping
• Granted Patent: US 9,974,171 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: C23C 18/1608 from pretreatment step, i.e. selective pre-treatment
• CPC Class Codes: C23C 18/1612 through irradiation means
• CPC Class Codes: C23C 18/1868 Radiation, e.g. UV, laser
• CPC Class Codes: C23C 18/1879 Use of metal, e.g. activation, sensitisation with noble metals
• CPC Class Codes: C23C 18/40 using reducing agents
• CPC Class Codes: C25D 11/08 containing inorganic acids
• CPC Class Codes: C25D 11/10 containing organic acids
• CPC Class Codes: C25D 11/16 Pretreatment , e.g. desmutting
• CPC Class Codes: C25D 11/246 for sealing layers
• CPC Class Codes: H05K 1/053 the metal substrate being covered by an inorganic insulating layer
• CPC Class Codes: H05K 2201/0116 Porous, e.g. foam
• CPC Class Codes: H05K 2203/0315 Oxidising metal
• CPC Class Codes: H05K 2203/107 Using laser light
• CPC Class Codes: H05K 2203/1147 Sealing or impregnating, e.g. of pores
• CPC Class Codes: H05K 3/185 by making a catalytic pattern by photo-imaging
• CPC Class Codes: H05K 3/44 Manufacturing insulated metal core circuits or other insulated electrically conductive core circuits H05K3/0058, H05K3/4608, and H05K3/4641 take precedence

Abstract

Embodiments of the present disclosure are directed to a circuit board. The circuit board comprises: an aluminum-based substrate; an alumina layer formed on at least one surface of the aluminum-based substrate; and a circuit layer formed on the alumina layer. The alumina layer comprises alumina and an element selected from a group consisting of chromium, nickel, a rare earth metal, and a combination thereof.

Claims

1. A circuit board, comprising:

an aluminum-based substrate;

an alumina layer formed on at least one surface of the aluminum-based substrate; and

a circuit layer formed on the alumina layer,

wherein the alumina layer comprises alumina and at least one element selected from chromium, nickel, one or more rare earth metal, or a combination thereof.

2. The circuit board according to claim 1, wherein a content of the element in the alumina layer ranges from 0.001 wt % to 20 wt %.

3. The circuit board according to claim 1, wherein the content of the element in the alumina layer ranges from 0.01 wt % to 1 wt %.

4. The circuit board according to claim 1, wherein a thickness of the alumina layer ranges from 10 μ

m to 300 μ

m.

5. The circuit board according to claim 1, wherein the thickness of the alumina layer ranges from 50 μ

m to 100 μ

m .

6. The circuit board according to claim 1, wherein the alumina layer is formed by performing an anodic oxidation and a sealing for the aluminum-based substrate.

7. The circuit board according to claim 6, wherein a sealing agent used in the sealing is selected from one or more dichromate, one or more nickel salt, one or more rare earth metal salt, or a combination thereof.

8. The circuit board according to claim 6, wherein the sealing agent used in the sealing is selected from potassium dichromate, sodium dichromate, nickel fluoride, nickel acetate, nickel sulfate, or a combination thereof.

9. A method for fabricating a circuit, comprising:

providing an aluminum-based substrate;

performing an anodic oxidation for the aluminum-based substrate to form an alumina layer on at least one surface of the aluminum-based substrate;

contacting the aluminum-based substrate with a solution containing a sealing agent to perform a sealing for the alumina layer to fill an element in the alumina layer;

irradiating a part of the alumina layer by an energy beam to activate the part of the alumina layer; and

performing a chemical plating for the aluminum-based substrate to form a circuit layer on the part of the alumina layer.

10. The method according to claim 9, wherein the element is selected from chromium, nickel, one or more rare earth metal, or a combination thereof.

11. The method according to claim 9, wherein an amount of the sealing agent is adjusted such that a content of the element in the alumina layer ranges from 0.001 wt % to 20 wt %.

12. The method according to claim 9, wherein the amount of the sealing agent is adjusted such that the content of the element in the alumina layer ranges from 0.01 wt % to 1 wt %.

13. The method according to claim 9, wherein a thickness of the alumina layer ranges from 10 μ

m to 300 μ

m .

14. The method according to claim 9, wherein the thickness of the alumina layer ranges from 50 μ

m to 100 μ

m .

15. The method according to claim 9, wherein the sealing agent is selected from one or more dichromate, one or more nickel salt, one or more rare earth metal salt, or a combination thereof.

16. The method according to claim 9, wherein the sealing agent is selected from potassium dichromate, sodium dichromate, nickel fluoride, nickel acetate, nickel sulfate, or a combination thereof.

17. The method according to claim 9, wherein the energy beam is from a laser.

18. The method according to claim 17, wherein the laser has a wavelength ranging from 532 nm to 1064 nm and a power ranging from 20 W to 100 W.

19. The method according to claim 17, wherein the laser has a wavelength of 1064 nm and a power ranging from 20 W to 30 W.