BIOSENSOR DEVICES, SYSTEMS AND METHODS THEREFOR
First Claim
1. A method of manufacturing an apparatus for sensing a target material, the method comprising:
- patterning at least one semiconductor device onto a silicon substrate, wherein the at least one semiconductor device includes at least three electrically-contiguous semiconductor regions and end electrodes;
doping the at least three electrically-contiguous semiconductor regions to exhibit a common polarity, wherein the at least three electrically-contiguous semiconductor regions include a sandwich region sandwiched between two of the at least three electrically-contiguous semiconductor regions, and wherein the two of the at least three electrically-contiguous semiconductor regions are doped at a higher concentration than the sandwiched region and are electrically connected to the end electrodes; and
defining a location, on the silicon substrate, for a fluidic channel under the at least one semiconductor device, wherein the at least three electrically-contiguous semiconductor regions are configured and arranged adjacent to the fluidic channel with a surface directed toward the fluidic channel for coupling to the target material in a fluid in the fluidic channel, and for responding to a change in potential attributable to the target material.
1 Assignment
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Accused Products
Abstract
A sensing apparatus for sensing target materials including biological or chemical molecules in a fluid. One such apparatus includes a semiconductor-on-insulator (SOI) structure having an electrically-insulating layer, a fluidic channel supported by the SOI structure and configured and arranged to receive and pass a fluid including the target materials, and a semiconductor device including at least three electrically-contiguous semiconductor regions doped to exhibit a common polarity. The semiconductor regions include a sandwiched region sandwiched between two of the other semiconductor regions, and configured and arranged adjacent to the fluidic channel with a surface directed toward the fluidic channel for coupling to the target materials in the fluidic channel, and further arranged for responding to a bias voltage. The sensing apparatus also includes an amplification circuit in or on the SOI and that is arranged to facilitate sensing of the target material near the fluidic channel.
26 Citations
20 Claims
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1. A method of manufacturing an apparatus for sensing a target material, the method comprising:
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patterning at least one semiconductor device onto a silicon substrate, wherein the at least one semiconductor device includes at least three electrically-contiguous semiconductor regions and end electrodes; doping the at least three electrically-contiguous semiconductor regions to exhibit a common polarity, wherein the at least three electrically-contiguous semiconductor regions include a sandwich region sandwiched between two of the at least three electrically-contiguous semiconductor regions, and wherein the two of the at least three electrically-contiguous semiconductor regions are doped at a higher concentration than the sandwiched region and are electrically connected to the end electrodes; and defining a location, on the silicon substrate, for a fluidic channel under the at least one semiconductor device, wherein the at least three electrically-contiguous semiconductor regions are configured and arranged adjacent to the fluidic channel with a surface directed toward the fluidic channel for coupling to the target material in a fluid in the fluidic channel, and for responding to a change in potential attributable to the target material. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A method of manufacturing an apparatus for sensing a target material, the method comprising:
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patterning at least one semiconductor device onto a silicon substrate, wherein the at least one semiconductor device includes at least three electrically-contiguous semiconductor regions and end electrodes; doping the at least three electrically-contiguous semiconductor regions to exhibit a common polarity, wherein the at least three electrically-contiguous semiconductor regions includes a sandwiched region sandwiched between two of the at least three electrically-contiguous semiconductor regions, wherein the two of the at least three electrically-contiguous semiconductor regions are doped at a higher concentration than the sandwiched region and are electrically connected to the end electrodes; defining a location, on the silicon substrate for a fluidic channel under the at least one semiconductor device, wherein the semiconductor regions are configured and arranged adjacent to the fluidic channel with a surface directed toward the fluidic channel for coupling to the target material in a fluid in the fluidic channel, and for responding to a change in potential attributable to the target material; and forming the fluidic channel by bonding a fluidic structure of the fluidic channel to the silicon substrate such that the fluidic channel is defined by a portion of an upper-facing surface of the silicon substrate and by a bottom-facing surface of the fluidic structure. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20)
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Specification