RESISTIVE MEMORY DEVICE AND CONTROL METHOD THEREOF
First Claim
1. A resistive memory device, comprising:
- a first cell coupled to a word line, a first bit line and a source line;
a second cell coupled to the word line, a second bit line and the source line; and
a control circuit controlling levels of the word line, the first bit line and the source line to execute a set operation for the first cell such that the first cell has a first resistance, and controlling levels of the word line, the second bit line and the source line to execute a reset operation for the second cell such that the second cell has a second resistance greater than the first resistance,wherein during the execution of the set operation, the control circuit asserts the level of the source line at a pre-determined level and during the execution of the reset operation, the control circuit asserts the level of the source line at the pre-determined level,wherein the pre-determined level is a ground level and the control circuit simultaneously executes the set and reset operations.
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Accused Products
Abstract
A resistive memory device is provided. A first cell is coupled to a word line, a first bit line and a source line. A second cell is coupled to the word line, a second bit line and the source line. A control circuit controls the levels of the word line, the first bit line and the source line to execute a set operation for the first cell and execute a reset operation for the second cell. After the set and the reset operations, the resistance of the first cell is less than the resistance of the second cell. During the execution of the set operation, the control circuit asserts the level of the source line at a pre-determined level. During the execution of the reset operation, the control circuit asserts the level of the source line at the pre-determined level.
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Citations
20 Claims
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1. A resistive memory device, comprising:
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a first cell coupled to a word line, a first bit line and a source line; a second cell coupled to the word line, a second bit line and the source line; and a control circuit controlling levels of the word line, the first bit line and the source line to execute a set operation for the first cell such that the first cell has a first resistance, and controlling levels of the word line, the second bit line and the source line to execute a reset operation for the second cell such that the second cell has a second resistance greater than the first resistance, wherein during the execution of the set operation, the control circuit asserts the level of the source line at a pre-determined level and during the execution of the reset operation, the control circuit asserts the level of the source line at the pre-determined level, wherein the pre-determined level is a ground level and the control circuit simultaneously executes the set and reset operations. - View Dependent Claims (3, 4, 6, 7, 8, 9, 10)
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2. (canceled)
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5. (canceled)
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11. A control method for a resistive memory device comprising a first cell and a second cell, wherein the first cell is coupled to a word line, a first bit line and a source line and the second cell is coupled to the word line, a second bit line and the source line, the control method comprising:
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executing a set operation such that the first cell has a first resistance, wherein the set operation comprises; providing a pre-determined level to the source line; executing a reset operation such that the second cell has a second resistance higher than the first resistance, wherein the reset operation comprises; providing the pre-determined level to the source line, wherein the pre-determined level is a ground level and the set and reset operations are simultaneously executed. - View Dependent Claims (13, 14, 16, 17, 18, 19, 20)
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12. (canceled)
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15. (canceled)
Specification