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SEMICONDUCTOR MEMORY DEVICE

  • US 20160078954A1
  • Filed: 03/12/2015
  • Published: 03/17/2016
  • Est. Priority Date: 09/16/2014
  • Status: Active Grant
First Claim
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1. A semiconductor memory device comprising:

  • a first memory cell;

    a second memory cell adjacent to the first memory cell;

    a first word line coupled to the first memory cell; and

    a second word line coupled to the second memory cell,wherein when data is read from the first memory cell,a first voltage and a second voltage different from the first voltage are applied to the first word line, anda voltage applied to the second word line changes a first number of times while the first voltage is applied to the first word line, and the voltage applied to the second word line changes a second number of times different from the first number of times while the second voltage is applied to the first word line.

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