SEMICONDUCTOR MANUFACTURING METHOD AND SEMICONDUCTOR MANUFACTURING APPARATUS
First Claim
1. A semiconductor manufacturing method for forming a contact to a semiconductor substrate, the method comprising the steps of:
- (a) implanting ions into a region of the semiconductor substrate to form an impurity region;
(b) forming a metal layer on said impurity region; and
(c) emitting light to said semiconductor substrate on which said metal layer has been formed for one second or less for heating, whereinsaid step (c) is performed in a forming gas atmosphere containing hydrogen.
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Accused Products
Abstract
Flash light is emitted from flash lamps to the surface of a semiconductor substrate on which a metal layer has been formed for one second or less to momentarily raise temperature on the surface of the semiconductor substrate including the metal layer and an impurity region to a processing temperature of 1000° C. or more. Heat treatment is performed by emitting flash light to the surface of the semiconductor substrate in a forming gas atmosphere containing hydrogen. By heating the surface of the semiconductor substrate to a high temperature in the forming gas atmosphere for an extremely short time period, contact resistance can be reduced without desorbing hydrogen taken in the vicinity of an interface of a gate oxide film for hydrogen termination.
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Citations
20 Claims
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1. A semiconductor manufacturing method for forming a contact to a semiconductor substrate, the method comprising the steps of:
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(a) implanting ions into a region of the semiconductor substrate to form an impurity region; (b) forming a metal layer on said impurity region; and (c) emitting light to said semiconductor substrate on which said metal layer has been formed for one second or less for heating, wherein said step (c) is performed in a forming gas atmosphere containing hydrogen. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A semiconductor manufacturing apparatus for forming a contact to a semiconductor substrate, the apparatus comprising:
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a chamber for housing a semiconductor substrate including an impurity region which is implanted with ions and on which a metal layer has been formed; a susceptor installed in said chamber to support said semiconductor substrate to be placed thereon; a forming gas supply unit forming, in said chamber, a forming gas atmosphere containing hydrogen; and a light emitting unit emitting light to said semiconductor substrate to be supported by said susceptor for one second or less for heating in said forming gas atmosphere. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification