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SEMICONDUCTOR MANUFACTURING METHOD AND SEMICONDUCTOR MANUFACTURING APPARATUS

  • US 20160079085A1
  • Filed: 06/26/2015
  • Published: 03/17/2016
  • Est. Priority Date: 09/12/2014
  • Status: Active Grant
First Claim
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1. A semiconductor manufacturing method for forming a contact to a semiconductor substrate, the method comprising the steps of:

  • (a) implanting ions into a region of the semiconductor substrate to form an impurity region;

    (b) forming a metal layer on said impurity region; and

    (c) emitting light to said semiconductor substrate on which said metal layer has been formed for one second or less for heating, whereinsaid step (c) is performed in a forming gas atmosphere containing hydrogen.

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