POWER SEMICONDUCTOR MODULE AND METHOD OF MANUFACTURING THE SAME

• US 20160079156A1
• Filed: 08/17/2015
• Published: 03/17/2016
• Est. Priority Date: 08/19/2014
• Status: Abandoned Application

• Current Assignee: ABB Schweiz AG (ABB Limited)
• Original Assignee: ABB Technology OY (ABB Limited)
• Inventors: Liu, Chunlei, Cottet, Didier, Brem, Franziska, KICIN, Slavo
• Application Number:
  US14/827,884
• Publication Number:
  US 20160079156A1
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: H01L 21/4821 Flat leads, e.g. lead frames with or without insulating supports
• CPC Class Codes: H01L 21/4846 Leads on or in insulating or insulated substrates, e.g. metallisation H01L21/4821 takes precedence; metallisation of ceramics in general C04B41/51; printed circuits H05K3/00
• CPC Class Codes: H01L 2224/04105 Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
• CPC Class Codes: H01L 2224/12105 Bump connectors formed on an encapsulation of the semiconductor or solid-state body, e.g. bumps on chip-scale packages
• CPC Class Codes: H01L 2224/24137 the bodies being arranged next to each other, e.g. on a common substrate
• CPC Class Codes: H01L 2224/32225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/32245 the item being metallic
• CPC Class Codes: H01L 2224/73267 Layer and HDI connectors
• CPC Class Codes: H01L 2224/8384 Sintering
• CPC Class Codes: H01L 2224/92244 the second connecting process involving a build-up interconnect
• CPC Class Codes: H01L 23/142 Metallic substrates having insulating layers
• CPC Class Codes: H01L 23/3675 characterised by the shape of the housing
• CPC Class Codes: H01L 23/492 Bases or plates or solder therefor
• CPC Class Codes: H01L 23/49537 Plurality of lead frames mounted in one device
• CPC Class Codes: H01L 23/49562 for devices being provided for in H01L29/00
• CPC Class Codes: H01L 23/49861 Lead-frames fixed on or encapsulated in insulating substrates H01L23/4985, H01L23/49805 take precedence
• CPC Class Codes: H01L 23/5389 the chips being integrally enclosed by the interconnect and support structures
• CPC Class Codes: H01L 24/19 Manufacturing methods of high density interconnect preforms
• CPC Class Codes: H01L 24/20 Structure, shape, material or disposition of high density interconnect preforms
• CPC Class Codes: H01L 24/32 of an individual layer connector
• CPC Class Codes: H01L 24/73 : Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
• CPC Class Codes: H01L 24/83 : using a layer connector
• CPC Class Codes: H01L 24/92 : Specific sequence of method steps
• CPC Class Codes: H01L 25/071 : the devices being arranged next and on each other, i.e. mixed assemblies
• CPC Class Codes: H01L 25/18 : the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
• CPC Class Codes: H01L 25/50 : Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00 H01L21/50 takes precedence
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/13055 : Insulated gate bipolar transistor [IGBT]
• CPC Class Codes: H01L 2924/13091 : Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 2924/15153 : the die mounting substrate comprising a recess for hosting the device

Abstract

The present disclosure describes a power electronics module comprising a lead frame in which a chip of a first semiconductor device is embedded, a first PCB mounted on top of the lead frame and the chip of the first semiconductor device, and a support frame mounted on top of the PCB, the support frame comprising a cavity in which the chip of a second semiconductor device is embedded, wherein the chips of the first semiconductor device and the second semiconductor device are positioned on top of each other, and the first PCB comprises a first electrically conducting path between the chips of the first semiconductor device and the second semiconductor device.

Claims

1. A power electronics module comprising a first semiconductor device and a second semiconductor device, wherein the module is configured to operate such that, in response to a control signal, a current flowing through one of the semiconductor devices commutates to flow through the other semiconductor device, wherein the power electronics module further comprises

a lead frame in which a chip of the first semiconductor device is embedded,

a first PCB mounted on top of the lead frame and the chip of the first semiconductor device, and

a support frame mounted on top of the PCB, wherein the chip of the second semiconductor device is embedded in the support frame, and

wherein

the chips of the first semiconductor device and the second semiconductor device are positioned on top of each other,

the first PCB comprises a first electrically conducting path between the chips of the first semiconductor device and the second semiconductor device.

2. A power electronics module according to claim 1, the power electronics module comprising a first semiconductor switch and a second semiconductor switch connected in series, a first semiconductor rectifier connected in parallel with the first switch, and a second semiconductor rectifier connected in parallel with the second switch, wherein the first switch and the first rectifier act as first semiconductor devices and the second switch and second rectifier act as second semiconductor devices, and wherein

chips of the first switch and the first rectifier are embedded in cavities in a top surface of the lead frame,

the first PCB is mounted on top of the lead frame and the chips of the first switch and the first rectifier, and

chips of the second switch and the second rectifier are embedded in cavities in the support frame,

the chips of the first switch and the second rectifier are positioned on top of each other,

the chips of the second switch and the first rectifier are positioned on top of each other, and

the first PCB comprises a first electrically conducting path between the chips of the first switch and the second rectifier and a second electrically conducting path between the chips of the second switch and the first rectifier.

3. A power electronics module according to claim 1, wherein the power electronics module further comprises a second PCB formed on top of the support frame, wherein the second PCB provides an electrical connection between a top surface of the second PCB and the chip of a second semiconductor device on a bottom side of the second PCB.

4. A power electronics module according to claim 3, wherein the power electronics module further comprises a first electrically insulating layer on top of the second PCB, and a second electrically insulating layer on the bottom of the lead frame.

5. A power electronics module according to claim 4, wherein the power electronics module further comprises a base plate on the bottom of the second electrically insulating layer.

6. A power electronics module as claimed in claim 1, wherein the module comprises a plurality of lead frames.

7. An arrangement comprising a power semiconductor module as claimed in claim 1, and heat sinks mounted on both sides of the power semiconductor module.

8. An arrangement as claimed in claim 7, wherein cooling means are directly connected to DC potentials of the power semiconductor module.

11. A power electronics module according to claim 2, wherein the power electronics module further comprises a second PCB formed on top of the support frame, wherein the second PCB provides an electrical connection between a top surface of the second PCB and the chip of a second semiconductor device on a bottom side of the second PCB.

12. A power electronics module as claimed in claim 2, wherein the module comprises a plurality of lead frames.

13. A power electronics module as claimed in claim 3, wherein the module comprises a plurality of lead frames.

14. A power electronics module as claimed in claim 4, wherein the module comprises a plurality of lead frames.

15. A power electronics module as claimed in claim 5, wherein the module comprises a plurality of lead frames.

9. A method for producing a power electronics module comprising

a first semiconductor device and a second semiconductor device, wherein the module is configured to operate such that, in response to a control signal, a current flowing through one of the semiconductor devices commutates to flow through the other semiconductor device, wherein the method comprises

forming a lead frame with a cavity for receiving a chip of the first semiconductor device,

bonding the chip of the first semiconductor device to the cavity,

forming a first PCB on top of the lead frame and the chip of the first semiconductor device, the first PCB comprising a first electrically conducting path between an electrical contact on a top surface of the first PCB and the chip of the first semiconductor device on a bottom side of the first PCB,

bonding a chip of the second semiconductor device to the electrical contact on the top surface of the first PCB so that the chips of the first semiconductor device and the second semiconductor device are positioned on top of each other, and,

before or after the bonding of the chip of the second semiconductor device, mounting a support frame on top of the first PCB, wherein the support frame has a cavity for receiving the chip of the second semiconductor device.

10. A method as claimed in claim 9, wherein the method further comprises forming a second PCB on top of the support frame, the second PCB comprising a second electrically conducting path between a top surface of the second PCB and the chip of the second semiconductor device on a bottom side of the second PCB.